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PDF STGW30NC60VD Data sheet ( Hoja de datos )
| Número de pieza | STGW30NC60VD | |
| Descripción | N-CHANNEL IGBT | |
| Fabricantes | ST Microelectronics | |
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STGW30NC60VD
N-channel 40A - 600V - TO-247
Very fast switching PowerMESH™ IGBT
General features
Type
VCES
VCE(sat)
(Max)@ 25°C
IC
@100°C
STGW30NC60VD 600V
<2.5V
40A
■ High current capability
■ High frequency operation up to 50KHz
■ Very soft ultra fast recovery antiparallel diode
■ New generation products with tighter
parameter distribution
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “V” identifies a family
optimized for high frequency.
Applications
■ High frequency inverters, UPS
■ Motor drivers
■ SMPS and PFC in both hard switch and
resonant topologies
TO-247
Internal schematic diagram
Order code
Part number
STGW30NC60VD
Marking
GW30NC60VD
Package
TO-247
Packaging
Tube
February 2007
Rev 2
1/13
www.st.com
13
1 page  
STGW30NC60VD
Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
(di/dt)onf
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC=390 V, IC= 20A,
RG=3.3Ω, VGE=15V
Tj=25°C (see Figure 16)
VCC=390 V, IC= 20A,
RG=3.3Ω, VGE=15V
Tj=125°C (see Figure 16)
VCC=390 V, IC= 20A,
RG=3.3Ω, VGE=15V
Tj=25°C (see Figure 16)
VCC=390 V, IC= 20A,
RG=3.3Ω, VGE=15V
Tj=125°C (see Figure 16)
31
11
1600
31
11.5
1500
28
100
75
66
150
130
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
Table 6. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min Typ. Max Unit
Eon (1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Eon (1)
Eoff
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC=390 V, IC= 20A,
RG=3.3Ω, VGE=15V,
Tj= 25°C (see Figure 18)
VCC=390 V, IC= 20A,
RG=3.3Ω, VGE=15V,
Tj= 125°C
(see Figure 18)
220 300
330 450
550 750
µJ
µJ
µJ
450
770
1220
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 18. Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
Table 7. Collector-emitter diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
Vf Forward on-voltage
trr Reverse recovery time
Qrr Reverse recovery charge
Irrm Reverse recovery current
trr Reverse recovery time
Qrr Reverse recovery charge
Irrm Reverse recovery current
If = 10A
If = 10A, Tj = 125°C
If = 20A, VR = 40V,
Tj = 25°C, di/dt =100A/µs
(see Figure 19)
If = 20A, VR = 40V,
Tj = 125°C,
di/dt =100A/µs
(see Figure 19)
1.3 2.0
1
V
V
44 ns
66 nC
3A
88 ns
237 nC
5.4 A
5/13
5 Page 
STGW30NC60VD
Package mechanical data
DIM.
A
D
E
F
F1
F2
F3
F4
G
H
L
L1
L2
L3
L4
L5
M
V
V2
Diam
MIN.
4.90
2.35
0.6
1.2
1.9
3.04
15.77
20.83
3.93
18.72
20.04
40.88
6.04
2
3.56
TO-247 MECHANICAL DATA
mm.
TYP
3
2
10.90
5°
60°
MAX.
5.16
2.45
0.76
1.33
2.13
3.2
16.03
21.09
4.45
19.18
20.31
41.40
6.30
3
3.66
MIN.
0.193
0.093
0.024
0.047
0.075
0.120
0.621
0.820
0.155
0.737
0.789
1.609
0.238
0.140
inch
TYP.
0.118
0.078
0.429
0.078
5°
60°
MAX.
0.203
0.096
0.030
0.052
0.084
0.126
0.631
0.830
0.175
0.755
0.800
1.630
0.248
0.118
0.144
11/13
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