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PDF STGD6NC60HD Data sheet ( Hoja de datos )
| Número de pieza | STGD6NC60HD | |
| Descripción | N-CHANNEL IGBT | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STGD6NC60HD
N-CHANNEL 6A - 600V DPAK
Very Fast PowerMESH™ IGBT
TARGET SPECIFICATION
Table 1: General Features
Figure 1: Package
TYPE
VCES
VCE(sat)
IC
(Max) @25°C @100°C
STGD6NC60HDT4 600 V < 2.5 V
6A
s LOWER ON-VOLTAGE DROP (Vcesat)
s OFF LOSSES INCLUDE TAIL CURRENT
s LOSSES INCLUDE DIODE RECOVERY
ENERGY
s LOWER CRES/CIES RATIO
s HIGH FREQUENCY OPERATION
s VERY SOFT ULTRA FAST RECOVERY ANTI
PARALLEL DIODE
s NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH™ IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high
frequency applications in order to achieve very
high switching performances (reduced tfall) man-
taining a low voltage drop.
3
1
DPAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
s HIGH FREQUENCY INVERTERS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
s MOTOR DRIVERS
Table 2: Order Code
PART NUMBER
STGD6NC60HDT4
MARKING
GD6NC60HD
PACKAGE
DPAK
PACKAGING
TAPE & REEL
June 2005
This is a preliminary information on a new product foreseen to be developed. Details are subjet to change without notice
Rev. 1
1/9
1 page  
STGD6NC60HD
Figure 3: Test Circuit for Inductive Load
Switching
Figure 5: Gate Charge Test Circuit
Figure 4: Switching Waveforms
Figure 6: Diode Recovery Time Waveforms
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STGD6NC60HD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STGD6NC60H | N-CHANNEL IGBT | ST Microelectronics |
| STGD6NC60HD | N-CHANNEL IGBT | ST Microelectronics |
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