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PDF STU3525NLS Data sheet ( Hoja de datos )
| Número de pieza | STU3525NLS | |
| Descripción | N-Channel Logic Level E nhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STU3525NLS (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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S T U/D3525NLS
S amHop Microelectronics C orp.
Aug 06,2005
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
25V
ID R DS (ON) ( m W ) Max
16 @ VGS = 10V
35A
25 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage R ating
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TC=25 C
-P ulsed a
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
S ymbol
V s pike C
VDS
VGS
ID
IDM
IS
PD
Limit
30
25
20
35
75
20
50
Unit
V
V
V
A
A
A
W
Operating and S torage Temperature R ange TJ, TS TG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
1
1 page  
S T U/D3525NLS
1200
1000
800
C is s
600
400
C oss
6 200
C rss
0
05
10 15
20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
220
100
60
10
T D(off)
Tr
T D(on)
Tf
V DS =15V ,ID=1A
1 V G S =10V
1 6 10 60 100 300 600
R g, G ate R es is tance (W)
F igure 11.s witching characteris tics
10
VDS =15V
8 ID=20A
6
4
2
0
0 3 6 9 12 15 18 21 24
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
100
80
11s001m0sms1ms
10 DC
V GS =10V
1 S ingle P ulse
Tc=25 C
0.5
0.1 1
10 30 60
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STU3525NLS.PDF ] | |
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