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PDF STU302S Data sheet ( Hoja de datos )
| Número de pieza | STU302S | |
| Descripción | N-Channel Logic Level E nhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STU302S (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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S T U/D302S
S amHop Microelectronics C orp.
Apr 03,2006
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
30V
ID
50 A
R DS (ON) ( m Ω ) Max
9 @ VGS = 10V
12 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
G
DS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TC=25 C
a
-P ulsed
Drain-S ource Diode Forward C urrent
S ymbol
VDS
VGS
ID
IDM
IS
Limit
30
20
50
180
20
Unit
V
V
A
A
A
Maximum P ower Dissipation @ Tc=25 C
PD
50
W
Operating and S torage Temperature R ange
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
TJ, TSTG
R JC
R JA
-55 to 175
3
50
C
C /W
C /W
1
1 page  
S T U/D302S
1200
1000
C is s
800
600
C oss
400
C rss
6 200
0
0 5 10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
10
VDS =15V
8 ID=20A
6
4
2
0
0 5 10 15 20 25 30 35 40
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
220
100
60
10 TD(on)
T D(off)
Tr
Tf
V DS =15V ,ID=1A
1 V G S =10V
1 6 10 60 100 300 600
R g, G ate R es is tance (Ω)
F igure 11.s witching characteris tics
600
100
100m1s0ms1ms
10 1s
DC
V GS =10V
1 S ingle P ulse
Tc=25 C
0.5
0.1 1
10 30 60
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STU302S.PDF ] | |
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