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MW6IC2015GNBR1 Schematic ( PDF Datasheet ) - Freescale Semiconductor

Teilenummer MW6IC2015GNBR1
Beschreibung RF LDMOS Wideband Integrated Power Amplifiers
Hersteller Freescale Semiconductor
Logo Freescale Semiconductor Logo 




Gesamt 28 Seiten
MW6IC2015GNBR1 Datasheet, Funktion
www.DataSheet4U.com
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW6IC2015N wideband integrated circuit is designed for base station
applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS
IC technology and integrates a multi - stage structure. Its wideband on - chip
design makes it usable from 1805 to 1990 MHz. The linearity performances
cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS,
TDMA, CDMA, W - CDMA and TD - SCDMA.
Final Application
Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2 =
1197300m- A19, 9P0ouMt =Hz1)5 Watts PEP, Full Frequency Band (1805 - 1880 MHz or
Power Gain — 26 dB
Power Added Efficiency — 28%
IMD — - 30 dBc
Driver Application
T1197yp30i0cma- A1l 9G, 9PS0oMuMt E=HDz3)GWEaPttesrAfovrgm.,aFncuell:FVreDqDu=en2c6yVBoaltnsd, I(D1Q810=5 -1138080mAM,HIDzQo2r =
Power Gain — 27 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = - 69 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 0.8% rms
Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW
Pout.
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
200°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VDS1
RFin
VGS1
VGS2
Quiescent Current
Temperature Compensation
RFout/VDS2
Figure 1. Functional Block Diagram
Document Number: MW6IC2015N
Rev. 2, 2/2007
MW6IC2015NBR1
MW6IC2015GNBR1
1805 - 1990 MHz, 15 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW6IC2015NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW6IC2015GNBR1
GND 1
VDS1
NC
2
3
NC 4
NC 5
16 GND
15 NC
RFin
NC
VGS1
VGS2
NC
GND
6
7
8
9
10
11
14 RFout /
VDS2
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6IC2015NBR1 MW6IC2015GNBR1
1






MW6IC2015GNBR1 Datasheet, Funktion
TYPICAL CHARACTERISTICS — 1930 - 1990 MHz
40 0
35 −10
PAE
30 −20
Gps
25 −30
IRL
20 −40
IMD
15 VDD = 26 Vdc, Pout = 7.5 W (Avg.)
IDQ1 = 100 mA, IDQ2 = 170 mA
100 kHz Tone Spacing
10
1900 1920 1940 1960
− 50
− 60
1980 2000
f, FREQUENCY (MHz)
Figure 5. Two - Tone Wideband Performance
@ Pout = 7.5 Watts Avg.
30
Gps
25
20 IRL
0
− 10
− 20
15 −30
IMD
10
− 40
PAE
5
0
1900
VDD = 26 Vdc, Pout = 1.5 W (Avg.)
IDQ1 = 100 mA, IDQ2 = 170 mA
100 kHz Tone Spacing
1920 1940 1960
1980
− 50
− 60
2000
f, FREQUENCY (MHz)
Figure 6. Two - Tone Wideband Performance
@ Pout = 1.5 Watts Avg.
31
IDQ1 = 130 mA
30 IDQ2 = 170 mA
29 IDQ1 = 100 mA
28 IDQ2 = 170 mA
27 IDQ1 = 100 mA
IDQ2 = 130 mA
26
IDQ1 = 100 mA
IDQ2 = 210 mA
IDQ1 = 70 mA
IDQ2 = 170 mA
25
VDD = 26 Vdc
24 Center Frequency = 1960 MHz
100 kHz Tone Spacing
23
0.1 1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Two - Tone Power Gain versus
Output Power
30
− 10
VDD = 26 Vdc
−20 IDQ1 = 100 mA, IDQ2 = 170 mA
f = 1960 MHz, 100 kHz Tone Spacing
− 30
5th Order
− 40
3rd Order
− 50
7th Order
− 60
− 70
− 80
0.1
1
10 30
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion Products
versus Output Power
MW6IC2015NBR1 MW6IC2015GNBR1
6
RF Device Data
Freescale Semiconductor

6 Page









MW6IC2015GNBR1 pdf, datenblatt
VDD1
MW6IC2015, Rev. 0
C2 C3
VDD2
C14
VGG1
R1
R2
C15
VGG2
C1
C6
C9
C7
C11
C8 C16
C10 C12 C13
C4
C5
Figure 22. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout — 1805 - 1880 MHz
MW6IC2015NBR1 MW6IC2015GNBR1
12
RF Device Data
Freescale Semiconductor

12 Page





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