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PDF MW5IC2030NBR1 Data sheet ( Hoja de datos )
| Número de pieza | MW5IC2030NBR1 | |
| Descripción | RF LDMOS Wideband Integrated Power Amplifiers | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW5IC2030N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1930 to 1990 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA,
(IDPQilo2 t=,
S2y3n0cm, PAa,gPinougt,
= 5 Watts Avg.,
Traffic Codes 8
Full Frequency Band, IS - 95 CDMA
Through 13), Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — - 49 dBc in 30 kHz Channel Bandwidth
Driver Application
• S2T4yyp0niccm,aAPl C,aPgDionMugtA,=TP1reaWrfffoiacrtmtCAaovndgce.es,:F8VuTDllhDFr=oreu2qg7uheV1no3cl)tys, ,BCIahDnaQdn1,n=IeSl2-B290a5nmCdAwD,iMdIDtAhQ=2(P=ilot,
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 24 dB
ACPR @ 885 kHz Offset — - 63 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 27 Vdc, 1990 MHz, 30 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 0 to 43 dBm CW
Pout.
• On - Chip Matching (50 Ohm Input, >4 Ohm Output)
• Integrated Temperature Compensation Capability with Enable/Disable
Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW5IC2030N
Rev. 7, 1/2006
MW5IC2030NBR1
MW5IC2030GNBR1
1930 - 1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W - CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW5IC2030NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW5IC2030GNBR1
VDS1
VRD2
VRG2
RFin
VRD1
VRG1/VGS1
VGS2
Quiescent Current
Temperature Compensation
Figure 1. Functional Block Diagram
VDS2/RFout
GND
VDS1
VRD2
VRG2
GND
RFin
VRD1
VRG1/VGS1
VGS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15 NC
14
VDS2/
RFout
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW5IC2030NBR1 MW5IC2030GNBR1
1
1 page  
RD2
VD1
RG2
C19
MW5IC2030M
Rev 3
VD2 C20
C9
R3
C6
C12
R6
C13
C7
C17
C18
C15
C16
C14
R4
R5
C10
C8
C5
C3
C2
C1
C4
RD1
C11
R1
R2
VG2
VG1RG1
NC
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MW5IC2030NBR1(GNBR1) Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MW5IC2030NBR1 MW5IC2030GNBR1
5
5 Page 
DRIVER APPLICATION PERFORMANCE
RD2
VD1
RG2
C19
MW5IC2030M
Rev 3
VD2 C20
C9
R3
C6
C12
R6
C13
C7
C17
C18
C15
C16
C14
R4
R5
C10
C8
C5
C3
C2
C1
C4
RD1
C11
R1
R2
VG2
VG1RG1
NC
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 23. MW5IC2030NBR1(GNBR1) Test Circuit Component Layout
for Driver Application Tests
RF Device Data
Freescale Semiconductor
MW5IC2030NBR1 MW5IC2030GNBR1
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MW5IC2030NBR1.PDF ] | |
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