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MW5IC2030GNBR1 Schematic ( PDF Datasheet ) - Freescale Semiconductor

Teilenummer MW5IC2030GNBR1
Beschreibung RF LDMOS Wideband Integrated Power Amplifiers
Hersteller Freescale Semiconductor
Logo Freescale Semiconductor Logo 




Gesamt 16 Seiten
MW5IC2030GNBR1 Datasheet, Funktion
www.DataSheet4U.com
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW5IC2030N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1930 to 1990 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA,
(IDPQilo2 t=,
S2y3n0cm, PAa,gPinougt,
= 5 Watts Avg.,
Traffic Codes 8
Full Frequency Band, IS - 95 CDMA
Through 13), Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — - 49 dBc in 30 kHz Channel Bandwidth
Driver Application
S2T4yyp0niccm,aAPl C,aPgDionMugtA,=TP1reaWrfffoiacrtmtCAaovndgce.es,:F8VuTDllhDFr=oreu2qg7uheV1no3cl)tys, ,BCIahDnaQdn1,n=IeSl2-B290a5nmCdAwD,iMdIDtAhQ=2(P=ilot,
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 24 dB
ACPR @ 885 kHz Offset — - 63 dBc in 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 27 Vdc, 1990 MHz, 30 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 0 to 43 dBm CW
Pout.
On - Chip Matching (50 Ohm Input, >4 Ohm Output)
Integrated Temperature Compensation Capability with Enable/Disable
Function
On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
Integrated ESD Protection
200°C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW5IC2030N
Rev. 7, 1/2006
MW5IC2030NBR1
MW5IC2030GNBR1
1930 - 1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W - CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW5IC2030NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW5IC2030GNBR1
VDS1
VRD2
VRG2
RFin
VRD1
VRG1/VGS1
VGS2
Quiescent Current
Temperature Compensation
Figure 1. Functional Block Diagram
VDS2/RFout
GND
VDS1
VRD2
VRG2
GND
RFin
VRD1
VRG1/VGS1
VGS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15 NC
14
VDS2/
RFout
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW5IC2030NBR1 MW5IC2030GNBR1
1






MW5IC2030GNBR1 Datasheet, Funktion
TYPICAL CHARACTERISTICS
23 32
31
Gps
22 30
21 VDD = 27 Vdc, Pout = 10 W (Avg.)
IDQ1 = 160 mA, IDQ2 = 230 mA
100 kHz Tone Spacing
20
29
ηD 28
−26
IRL
−28
−16
−17
−30 −18
19 −32 −19
−34
18 IMD −36
1880 1900 1920 1940 1960 1980 2000 2020 2040
−20
−21
f, FREQUENCY (MHz)
Figure 5. Two - Tone Broadband Performance @ Pout = 10 Watts Avg.
24 9
Gps 8
23 ηD 7
6
22 VDD = 27 Vdc, Pout = 1 W (Avg.)
IDQ1 = 160 mA, IDQ2 = 230 mA
100 kHz Tone Spacing
5
−46 −16
21 IRL −47 −17
−48 −18
20 IMD −49 −19
−50 −20
19 −51
1880 1900 1920 1940 1960 1980 2000 2020 2040
−21
f, FREQUENCY (MHz)
Figure 6. Two - Tone Broadband Performance @ Pout = 1 Watt Avg.
26
25
IDQ1 = 160 mA
24 IDQ2 = 230 mA
IDQ1 = 200 mA
IDQ2 = 300 mA
23
IDQ1 = 120 mA
22 IDQ2 = 175 mA
21
VDD = 27 Vdc
20 f1 = 1960 MHz, f2 = 1960.1 MHz
Two−Tone Measurements
19
0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Two - Tone Power Gain versus
Output Power
100
−10
−15 VDD = 27 Vdc
−20 IDQ1 = 160 mA, IDQ2 = 230 mA
−25 f1 = 1960 MHz, f2 = 1960.1 MHz
−30 Two−Tone Measurements
−35
−40
−45
−50
−55
−60
−65
−70
−75
3rd Order
5th Order
7th Order
−80
0.1 1 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion Products
versus Output Power
MW5IC2030NBR1 MW5IC2030GNBR1
6
RF Device Data
Freescale Semiconductor

6 Page









MW5IC2030GNBR1 pdf, datenblatt
TYPICAL DRIVER APPLICATION CHARACTERISTICS
−60
VDD = 27 Vdc, IDQ1 = 220 mA, IDQ2 = 240 mA
−61 f1 = 1957.5 MHz, f2 = 1960 MHz, 2−Carrier N−CDMA
−62 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
−63
−64
−65
−66
−67
−68
−69
−70
20 21 22 23 24 25 26 27 28 29 30
Pout, OUTPUT POWER (dBm)
Figure 24. 2 - Carrier N - CDMA ACPR versus Output Power
MW5IC2030NBR1 MW5IC2030GNBR1
12
RF Device Data
Freescale Semiconductor

12 Page





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