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Teilenummer | MW5IC2030GNBR1 |
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Beschreibung | RF LDMOS Wideband Integrated Power Amplifiers | |
Hersteller | Freescale Semiconductor | |
Logo | ||
Gesamt 16 Seiten www.DataSheet4U.com
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW5IC2030N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1930 to 1990 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA,
(IDPQilo2 t=,
S2y3n0cm, PAa,gPinougt,
= 5 Watts Avg.,
Traffic Codes 8
Full Frequency Band, IS - 95 CDMA
Through 13), Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — - 49 dBc in 30 kHz Channel Bandwidth
Driver Application
• S2T4yyp0niccm,aAPl C,aPgDionMugtA,=TP1reaWrfffoiacrtmtCAaovndgce.es,:F8VuTDllhDFr=oreu2qg7uheV1no3cl)tys, ,BCIahDnaQdn1,n=IeSl2-B290a5nmCdAwD,iMdIDtAhQ=2(P=ilot,
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 24 dB
ACPR @ 885 kHz Offset — - 63 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 27 Vdc, 1990 MHz, 30 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 0 to 43 dBm CW
Pout.
• On - Chip Matching (50 Ohm Input, >4 Ohm Output)
• Integrated Temperature Compensation Capability with Enable/Disable
Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW5IC2030N
Rev. 7, 1/2006
MW5IC2030NBR1
MW5IC2030GNBR1
1930 - 1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W - CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW5IC2030NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW5IC2030GNBR1
VDS1
VRD2
VRG2
RFin
VRD1
VRG1/VGS1
VGS2
Quiescent Current
Temperature Compensation
Figure 1. Functional Block Diagram
VDS2/RFout
GND
VDS1
VRD2
VRG2
GND
RFin
VRD1
VRG1/VGS1
VGS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15 NC
14
VDS2/
RFout
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW5IC2030NBR1 MW5IC2030GNBR1
1
TYPICAL CHARACTERISTICS
23 32
31
Gps
22 30
21 VDD = 27 Vdc, Pout = 10 W (Avg.)
IDQ1 = 160 mA, IDQ2 = 230 mA
100 kHz Tone Spacing
20
29
ηD 28
−26
IRL
−28
−16
−17
−30 −18
19 −32 −19
−34
18 IMD −36
1880 1900 1920 1940 1960 1980 2000 2020 2040
−20
−21
f, FREQUENCY (MHz)
Figure 5. Two - Tone Broadband Performance @ Pout = 10 Watts Avg.
24 9
Gps 8
23 ηD 7
6
22 VDD = 27 Vdc, Pout = 1 W (Avg.)
IDQ1 = 160 mA, IDQ2 = 230 mA
100 kHz Tone Spacing
5
−46 −16
21 IRL −47 −17
−48 −18
20 IMD −49 −19
−50 −20
19 −51
1880 1900 1920 1940 1960 1980 2000 2020 2040
−21
f, FREQUENCY (MHz)
Figure 6. Two - Tone Broadband Performance @ Pout = 1 Watt Avg.
26
25
IDQ1 = 160 mA
24 IDQ2 = 230 mA
IDQ1 = 200 mA
IDQ2 = 300 mA
23
IDQ1 = 120 mA
22 IDQ2 = 175 mA
21
VDD = 27 Vdc
20 f1 = 1960 MHz, f2 = 1960.1 MHz
Two−Tone Measurements
19
0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Two - Tone Power Gain versus
Output Power
100
−10
−15 VDD = 27 Vdc
−20 IDQ1 = 160 mA, IDQ2 = 230 mA
−25 f1 = 1960 MHz, f2 = 1960.1 MHz
−30 Two−Tone Measurements
−35
−40
−45
−50
−55
−60
−65
−70
−75
3rd Order
5th Order
7th Order
−80
0.1 1 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion Products
versus Output Power
MW5IC2030NBR1 MW5IC2030GNBR1
6
RF Device Data
Freescale Semiconductor
6 Page TYPICAL DRIVER APPLICATION CHARACTERISTICS
−60
VDD = 27 Vdc, IDQ1 = 220 mA, IDQ2 = 240 mA
−61 f1 = 1957.5 MHz, f2 = 1960 MHz, 2−Carrier N−CDMA
−62 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
−63
−64
−65
−66
−67
−68
−69
−70
20 21 22 23 24 25 26 27 28 29 30
Pout, OUTPUT POWER (dBm)
Figure 24. 2 - Carrier N - CDMA ACPR versus Output Power
MW5IC2030NBR1 MW5IC2030GNBR1
12
RF Device Data
Freescale Semiconductor
12 Page | ||
Seiten | Gesamt 16 Seiten | |
PDF Download | [ MW5IC2030GNBR1 Schematic.PDF ] |
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