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PDF SST36VF1601 Data sheet ( Hoja de datos )
| Número de pieza | SST36VF1601 | |
| Descripción | 16 Mbit Concurrent SuperFlash | |
| Fabricantes | SST | |
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16 Mbit Concurrent SuperFlash
SST36VF1601
FEATURES:
SST36V160116Mb (x16) Concurrent SuperFlash
Data Sheet
• Organized as 1M x16
• Dual Bank Architecture for Concurrent
Read/Write Operation
– 16 Mbit Bottom Sector Protection
- SST36VF1601: 12 Mbit + 4 Mbit
• Single 2.7-3.6V for Read and Write Operations
• Superior Reliability
– Endurance: 100,000 cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 25 mA
– Standby Current: 4 µA
• Hardware Sector Protection/WP# Input Pin
– Protects 4 outermost sectors (4 KWord) in the
larger bank by driving WP# low and unprotects
by driving WP# high
• Hardware Reset Pin (RST#)
– Resets the internal state machine to reading
array data
• Sector-Erase Capability
– Uniform 1 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Fast Read Access Time
– 70 ns
• Latched Address and Data
• Fast Erase and Word-Program (typical):
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 70 ms
– Word-Program Time: 14 µs
– Chip Rewrite Time: 8 seconds
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
• CMOS I/O Compatibility
• Conforms to Common Flash Memory Interface (CFI)
• JEDEC Standards
– Flash EEPROM Pinouts and command sets
• Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (8mm x 10mm)
PRODUCT DESCRIPTION
The SST36VF1601 is 1M x16 CMOS Concurrent Read/
Write Flash Memory manufactured with SST’s proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches.The SST36VF1601 writes (Program
or Erase) with a 2.7-3.6V power supply. The
SST36VF1601 device conforms to JEDEC standard
pinouts for x16 memories.
Featuring high performance Word-Program, the
SST36VF1601 device provides a typical Word-Program
time of 14 µsec. The devices use Toggle Bit or Data# Poll-
ing to detect the completion of the Program or Erase opera-
tion. To protect against inadvertent write, the
SST36VF1601 device has on-chip hardware and Software
Data Protection schemes. Designed, manufactured, and
tested for a wide spectrum of applications, the
SST36VF1601 device is offered with a guaranteed endur-
ance of 10,000 cycles. Data retention is rated at greater
than 100 years.
The SST36VF1601 is suited for applications that require
convenient and economical updating of program, configu-
ration, or data memory. For all system applications, the
SST36VF1601 significantly improves performance and reli-
ability, while lowering power consumption. The
SST36VF1601 inherently uses less energy during Erase
and Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less than
alternative flash technologies. The SST36VF1601 also
improves flexibility while lowering the cost for program,
data, and configuration storage applications.
©2001 Silicon Storage Technology, Inc.
S71142-06-000 11/01
373
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
Concurrent SuperFlash and CSF are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
1 page  
16 Mbit Concurrent SuperFlash
SST36VF1601
Data Sheet
FUNCTIONAL BLOCK DIAGRAM
Memory
Address
Address
Buffers
RST#
CE#
WP#
WE#
OE#
RY/BY#
Control
Logic
(4 KWord Sector Protection)
SuperFlash Memory
12 Mbit Bank
SuperFlash Memory
4 Mbit Bank
I/O Buffers
DQ15 - DQ0
373 ILL B37.5
©2001 Silicon Storage Technology, Inc.
5
S71142-06-000 11/01 373
5 Page 
16 Mbit Concurrent SuperFlash
SST36VF1601
Data Sheet
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
OPERATING RANGE:
Range
Commercial
Extended
Ambient Temp
0°C to +70°C
-20°C to +85°C
VDD
2.7-3.6V
2.7-3.6V
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . CL = 30 pF
See Figures 17 and 18
©2001 Silicon Storage Technology, Inc.
11
S71142-06-000 11/01 373
11 Page | ||
| Páginas | Total 26 Páginas | |
| PDF Descargar | [ Datasheet SST36VF1601.PDF ] | |
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