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K9F1208R0C Schematic ( PDF Datasheet ) - Samsung semiconductor

Teilenummer K9F1208R0C
Beschreibung FLASH MEMORY
Hersteller Samsung semiconductor
Logo Samsung semiconductor Logo 




Gesamt 30 Seiten
K9F1208R0C Datasheet, Funktion
www.DataSheet4U.com
K9F1208U0C
K9F1208R0C K9F1208B0C
FLASH MEMORY
K9F1208X0C
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1






K9F1208R0C Datasheet, Funktion
K9F1208U0C
K9F1208R0C K9F1208B0C
63-Ball FBGA (measured in millimeters)
FLASH MEMORY
Top View
8.50±0.10
#A1
(Datum A)
Bottom View
#A1 INDEX MARK(OPTIONAL)
8.50±0.10
0.80 x 9= 7.20
0.80 x 5= 4.00
0.80
654321
A
B
A
B
(Datum B) C
D
E
F
G
H
63-0.45±0.05
0.20 M A B
0.10MAX
Side View
13.00±0.10
2.00
0.45±0.05
6

6 Page









K9F1208R0C pdf, datenblatt
K9F1208U0C
K9F1208R0C K9F1208B0C
FLASH MEMORY
Program / Erase Characteristics
Parameter
Symbol
Min
Typ
Max Unit
Program Time
tPROG(1)
-
200 500
µs
Number of Partial Program Cycles
in the Same Page
Main Array
Spare Array
Nop
-
-
-
-
1 cycle
2 cycle
Block Erase Time
tBERS
-
2
3 ms
NOTE NOTE: 1.Typical Program time is defined as the time within which more than 50% of the whole pages are programmed at Vcc of 3.3V and 25’C
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Parameter
Symbol
tCLS
tCLH
tCS
tCH
tWP(1)
tALS
tALH
tDS
tDH
tWC
tWH
Min
21
5
31
5
21
21
5
20
5
42
15
Max
-
-
-
-
-
-
-
-
-
-
-
NOTE: The transition of the corresponding control pins must occur only once while WE is held low.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
12

12 Page





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