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Teilenummer | K9F1208R0B |
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Beschreibung | 64M x 8 Bit NAND Flash Memory | |
Hersteller | Samsung semiconductor | |
Logo | ||
Gesamt 30 Seiten KK99FF11220088BR00BB
K9F1208U0B
www.DataSheet4U.com
Document Title
64M x 8 Bit NAND Flash Memory
Preliminary
FLASH MEMORY
Revision History
Revision No. History
0.0 Initial issue.
0.1 1. Note 1 ( Program/Erase Characteristics) is added( page 14 )
2. NAND Flash Technical Notes is changed.
-Invalid block -> initial invalid block ( page 16 )
-Error in write or read operation ( page 17 )
-Program Flow Chart ( page 17 )
3. Vcc range is changed
-2.4V~2.9V -> 2.5V~2.9V
-1.7V~1.95V ->1.65V~1.95V
4. Multi plane operation and Copy-Back Program are not supported with 1.8V
device.
Draft Date
Apr. 24th 2004
Oct. 11th.2004
Remark
Advance
Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
Package Dimensions
63-Ball FBGA (measured in millimeters)
Top View
8.50±0.10
#A1
(Datum A)
FLASH MEMORY
Bottom View
#A1 INDEX MARK(OPTIONAL)
8.50±0.10
0.80 x 9= 7.20
0.80 x 5= 4.00
0.80
654321
A
B
A
B
(Datum B) C
D
E
F
G
H
63-∅0.45±0.05
∅ 0.20 M A B
0.10MAX
Side View
13.00±0.10
2.00
0.45±0.05
6
6 Page KK99FF11220088BR00BB
K9F1208U0B
Preliminary
FLASH MEMORY
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
K9F1208X0B
Unit
Parameter
Symbol
Test Conditions
1.8V
2.7V
3.3V
Min Typ Max Min Typ Max Min Typ Max
Operating Sequential Read
Current
Program
ICC1
ICC2
tRC=50ns
(K9F1208R0B : 60ns),
CE=VIL
IOUT=0mA
-
- 8 15 - 10 20 - 10 20
mA
- 8 15 - 10 20 - 10 20
Erase
ICC3
-
- 8 15 - 10 20 - 10 20
Stand-by Current(TTL)
ISB1 CE=VIH, WP=0V/VCC
- - 1 - -1- -1
Stand-by Current(CMOS) ISB2 CE=VCC-0.2, WP=0V/VCC - 10 50 - 10 50 - 10 50
Input Leakage Current
ILI VIN=0 to Vcc(max)
-
- ±10 -
- ±10 -
- ±10 µA
Output Leakage Current
ILO VOUT=0 to Vcc(max)
-
- ±10 -
- ±10 -
- ±10
Input High Voltage
I/O pins
VIH*
Except I/O pins
VCCQ
-0.4
-
VCCQ VCCQ
+0.3 -0.4
-
VCCQ
+0.3
2.0
VCC
-0.4
-
VCC VCC
+0.3 -0.4
-
VCC
+0.3
2.0
-
VCCQ
+0.3
-
VCC
+0.3
Input Low Voltage, All
inputs
VIL*
- -0.3 - 0.4 -0.3 - 0.5 -0.3 - 0.8
V
Output High Voltage Level
VOH
K9F1208R0B :IOH=-100µA
K9F1208B0B :IOH=-100µA
K9F1208U0B :IOH=-400µA
VCCQ
-0.1
-
-
VCCQ
-0.4
-
- 2.4 -
-
Output Low Voltage Level
K9F1208R0B :IOL=100uA
VOL K9F1208B0B :IOL=100µA
K9F1208U0B :IOL=2.1mA
-
- 0.1 -
- 0.4 -
- 0.4
K9F1208R0B :VOL=0.1V
Output Low Current(R/B) IOL(R/B) K9F1208B0B :VOL=0.1V 3 4 - 3 4 - 8 10 - mA
K9F1208U0B :VOL=0.4V
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
12
12 Page | ||
Seiten | Gesamt 30 Seiten | |
PDF Download | [ K9F1208R0B Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
K9F1208R0B | 64M x 8 Bit NAND Flash Memory | Samsung semiconductor |
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