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PDF 74LVX573 Data sheet ( Hoja de datos )
| Número de pieza | 74LVX573 | |
| Descripción | LOW VOLTAGE CMOS OCTAL D-TYPE LATCH | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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74LVX573
LOW VOLTAGE CMOS OCTAL D-TYPE LATCH
(3-STATE NON INV.) WITH 5V TOLERANT INPUTS
s HIGH SPEED:
tPD=6.4ns (TYP.) at VCC = 3.3V
s 5V TOLERANT INPUTS
s POWER-DOWN PROTECTION ON INPUTS
s INPUT VOLTAGE LEVEL:
VIL = 0.8V, VIH = 2V at VCC =3V
s LOW POWER DISSIPATION:
ICC = 4 µA (MAX.) at TA=25°C
s LOW NOISE:
VOLP = 0.3V (TYP.) at VCC =3.3V
s SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 4 mA (MIN) at VCC = 3V
s BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
s OPERATING VOLTAGE RANGE:
VCC(OPR) = 2V to 3.6V (1.2V Data Retention)
s PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 573
s IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74LVX573 is a low voltage CMOS OCTAL
D-TYPE LATCH with 3 STATE OUTPUT NON
INVERTING fabricated with sub-micron silicon
gate and double-layer metal wiring C2MOS
technology. It is ideal for low power, battery
operated and low noise 3.3V applications.
This 8 bit D-Type latch is controlled by a latch
enable input (LE) and an output enable input (OE).
While the LE input is held at a high level, the Q
outputs will follow the data input precisely.
PIN CONNECTION AND IEC LOGIC SYMBOLS
SOP
TSSOP
ORDER CODES
PACKAGE
SOP
TSSOP
TUBE
74LVX573M
T&R
74LVX573MTR
74LVX573TTR
When the LE is taken low, the Q outputs will be
latched precisely at the logic level of D input data.
While the (OE) input is low, the 8 outputs will be in
a normal logic state (high or low logic level) and
while high level the outputs will be in a high
impedance state.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage.
This device can be used to interface 5V to 3V. It
combines high speed performance with the true
CMOS low power consumption.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
July 2001
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1 page  
74LVX573
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
VCC
(V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance 3.3
4 10 10 10 pF
COUT Output
Capacitance
3.3
6
pF
CPD Power Dissipation
Capacitance
3.3
(note 1)
fIN = 10MHz
29
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per circuit)
TEST CIRCUIT
TEST
tPLH, tPHL
tPZL, tPLZ
tPZH, tPHZ
CL =15/50pF or equivalent (includes jig and probe capacitance)
RL = R1 = 1KΩ or equivalent
RT = ZOUT of pulse generator (typically 50Ω)
SWITCH
Open
VCC
GND
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5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 74LVX573.PDF ] | |
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