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PDF SSS1N60B Data sheet ( Hoja de datos )
| Número de pieza | SSS1N60B | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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November 2001
SSP1N60B/SSS1N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G DS
TO-220
SSP Series
GD S
TO-220F
SSS Series
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
SSP1N60B SSS1N60B
600
1.0 1.0 *
0.6 0.6 *
3.0 3.0 *
± 30
50
1.0
3.4
5.5
34 17
0.27 0.13
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
SSP1N60B
3.67
0.5
62.5
SSS1N60B
7.48
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
1 page  
Typical Characteristics (Continued)
D = 0.5
100 0.2
0.1
0.05
0.02
1 0 -1 0 .0 1
sin gle pu lse
※ N otes :
1. Z θ JC(t) = 3.67 ℃ /W M ax.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W ave P u lse D u ra tion [se c]
101
Figure 11-1. Transient Thermal Response Curve for SSP1N60B
101
D = 0.5
0.2
100
0.1
0.05
1 0 -1
0.02
0.01
sin gle pu lse
※ N otes :
1. Zθ
(t)
JC
=
7.48
℃ /W
M ax.
2 . D uty Fa c to r, D = t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W ave P u lse D u ra tion [se c]
101
Figure 11-2. Transient Thermal Response Curve for SSS1N60B
©2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SSS1N60B.PDF ] | |
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