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PDF GB20NB32LZ Data sheet ( Hoja de datos )
| Número de pieza | GB20NB32LZ | |
| Descripción | N-CHANNEL PowerMESH TM IGBT | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STGB20NB32LZ
STGB20NB32LZ-1
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK
INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
IC
STGB20NB32LZ CLAMPED < 2.0 V
STGB20NB32LZ-1 CLAMPED < 2.0 V
20 A
20 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP
s HIGH CURRENT CAPABILITY
s HIGH VOLTAGE CLAMPING FEATURE
3
1
D2PAK
123
I2PAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s ELECTRONIC IGNITION FOR AUTOMOTIVE
ORDERING INFORMATION
SALES TYPE
STGB20NB32LZT4
STGB20NB32LZ-1
MARKING
GB20NB32LZ
GB20NB32LZ
PACKAGE
D2PAK
I2PAK
PACKAGING
TAPE & REEL
TUBE
December 2003
1/11
1 page  
Gate Charge vs Gate-Emitter Voltage
STGB20NB32LZ - STGB20NB32LZ-1
Normalized BreakDown Voltage vs Temperature
Break-Down Voltage vs Emitter Resistance
BVGEO (Zener Gate-Emitter) vs Temperature
Self Clamped Inductive Switching Energy vs
Open Secondary Coil
dV/dt Gate-Emitter Resistance
5/11
5 Page 
STGB20NB32LZ - STGB20NB32LZ-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
11/11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet GB20NB32LZ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GB20NB32LZ | N-CHANNEL PowerMESH TM IGBT | ST Microelectronics |
| GB20NB32LZ-1 | N-CHANNEL PowerMESH TM IGBT | ST Microelectronics |
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