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RD09MUP2 Schematic ( PDF Datasheet ) - Mitsubishi Electric

Teilenummer RD09MUP2
Beschreibung Silicon MOSFET Power Transistor
Hersteller Mitsubishi Electric
Logo Mitsubishi Electric Logo 




Gesamt 7 Seiten
RD09MUP2 Datasheet, Funktion
www.DataSheet4U.com
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
DESCRIPTION
RD09MUP2 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
8.0+/-0.2
(d)
0.2+/-0.05
(b)
7.0+/-0.2
(a)
(b)
FEATURES
•High power gain:
(4.5)
0.95+/-0.2
2.6+/-0.2
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 50%min. (520MHz)
•Integrated gate protection diode
INDEX MARK
[Gate]
TOP VIEW SIDE VIEW
DETAIL A
BOTTOM VIEW
APPLICATION
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
For output stage of high power amplifiers in
UHF band mobile radio sets.
SIDE VIEW
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD09MUP2 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
(c)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
VDSS Drain to source voltage
VGSS Gate to source voltage
CONDITIONS
Vgs=0V
Vds=0V
ID
Pin
Pch
Tj
Tstg
Rth j-c
Drain Current
Input Power
Channel dissipation
Junction Temperature
Storage temperature
Thermal resistance
-
Zg=Zl=50
Tc=25°C
-
-
Junction to case
Note: Above parameters are guaranteed independently.
RATINGS
40
-5 to +10
4.0
1.6
83
150
-40 to +125
1.5
UNIT
V
V
A
W
W
°C
°C
°C/W
D
G
S
SCHEMATIC DRAWING
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
- - 10
IGSS Gate to source leak current
VGS=10V, VDS=0V
- -1
VTH Gate threshold Voltage
VDS=12V, IDS=1mA
0.5 - 2.5
Pout Output power
ηD Drain efficiency
f=520MHz , VDD=7.2V
Pin=0.8W,Idq=1.0A
89
50 -
-
-
VSWRT Load VSWR tolerance
VDD=9.5V,Po=8W(Pin Control)
f=520MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
No destroy
Note: Above parameters, ratings, limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD09MUP2
MITSUBISHI ELECTRIC
1/7
1st Jun. 2006






RD09MUP2 Datasheet, Funktion
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
S11
S21
S12
S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.914 -176.9 4.363 78.5 0.012 0.2 0.825 -175.5
120 0.918 -177.4 3.638 74.9 0.012 -0.6 0.833 -176.2
140 0.920 -178.0 3.060 71.4 0.011 0.3 0.832 -177.1
160 0.922 -178.3 2.614 68.8 0.011 1.6 0.829 -177.3
180 0.921 -178.6 2.287 66.7 0.011 4.4 0.833 -177.4
200 0.921 -178.8 2.039 64.6 0.010 6.5 0.846 -177.2
220 0.922 -179.3 1.840 62.1 0.010 8.5 0.863 -177.4
240 0.925 -179.4 1.665 59.6 0.010 8.0 0.870 -177.5
260 0.924 -179.8 1.503 56.8 0.009 10.9 0.868 -177.9
280 0.928 180.0 1.364 54.7 0.009 13.1 0.864 -178.2
300 0.929 -180.0 1.240 52.9 0.009 18.6 0.860 -178.1
320 0.936 180.0 1.144 51.1 0.009 26.6 0.866 -178.4
340 0.935 179.8 1.064 49.4 0.009 27.8 0.879 -178.8
360 0.936 179.4 0.993 47.2 0.009 32.4 0.891 -179.0
380 0.937 179.0 0.923 45.2 0.009 34.4 0.896 -179.4
400 0.937 178.9 0.851 43.5 0.009 40.1 0.896 -179.7
420 0.939 178.5 0.795 41.7 0.009 47.0 0.895 -179.8
440 0.941 178.5 0.738 40.4 0.009 52.8 0.892 -180.0
460 0.944 178.3 0.696 39.3 0.010 50.3 0.898 179.6
480 0.946 178.1 0.654 38.0 0.011 56.9 0.908 179.3
500 0.948 178.0 0.619 36.5 0.011 59.5 0.912 178.8
520 0.950 177.9 0.585 34.8 0.012 62.7 0.914 178.4
540 0.949 177.5 0.549 33.5 0.012 63.1 0.915 178.1
560 0.948 177.1 0.518 32.2 0.014 63.6 0.916 178.0
580 0.950 177.0 0.491 31.1 0.014 65.6 0.918 177.8
600 0.952 176.6 0.467 30.3 0.014 66.3 0.919 177.6
620 0.954 176.5 0.444 29.5 0.015 67.6 0.924 177.0
640 0.958 176.5 0.426 28.5 0.016 69.8 0.930 176.4
660 0.954 176.4 0.400 27.2 0.017 69.8 0.932 176.3
680 0.957 176.3 0.382 26.3 0.017 70.8 0.929 176.0
700 0.956 176.0 0.367 25.6 0.018 71.9 0.929 175.9
720 0.955 175.5 0.350 24.9 0.019 72.4 0.931 175.8
740 0.956 175.2 0.334 23.9 0.019 72.5 0.930 175.3
760 0.959 174.9 0.319 23.4 0.020 73.0 0.934 174.8
780 0.958 175.0 0.308 22.3 0.021 72.7 0.939 174.5
800 0.959 174.8 0.293 22.0 0.021 74.0 0.944 174.3
820 0.962 174.8 0.281 21.5 0.022 73.9 0.939 174.1
840 0.962 174.5 0.271 21.0 0.023 74.2 0.938 174.0
860 0.961 174.3 0.261 20.4 0.023 74.1 0.939 173.9
880 0.960 174.0 0.252 20.0 0.025 73.9 0.940 173.4
900 0.961 173.6 0.244 19.5 0.025 74.6 0.942 173.0
920 0.961 173.3 0.233 18.9 0.026 74.4 0.944 172.5
940 0.960 173.3 0.225 18.5 0.027 74.7 0.945 172.3
960 0.962 173.1 0.219 18.2 0.027 74.7 0.945 172.3
980 0.962 172.9 0.211 17.5 0.029 74.3 0.948 172.4
1000 0.960 172.8 0.206 18.0 0.029 74.4 0.948 172.0
RD09MUP2
MITSUBISHI ELECTRIC
6/7
1st Jun. 2006

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