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PDF MRF5S21150HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF5S21150HR3 | |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
3PTy.o8pu4tic=Mal3H23z-,WCPaaArttRrsie=Ar vW8g.5.-,[email protected]%onrcmPyaroBnbacaenb:diV,litCDyDhoa=nn2nC8eClVDBoFal.tnsd, wIDidQth=
1300
=
mA,
Power Gain — 12.5 dB
Efficiency — 25%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S21150H
Rev. 1, 5/2006
MRF5S21150HR3
MRF5S21150HSR3
2110 - 2170 MHz, 33 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S21150HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S21150HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +65
- 0.5, +15
380
2.2
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ TC = 25°C
Derate above 25°C
Tstg - 65 to +150
TC 150
TJ 200
CW 150
0.84
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 33 W CW
RθJC
0.46
0.47
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
W
W/°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S21150HR3 MRF5S21150HSR3
1
1 page  
TYPICAL CHARACTERISTICS
13 35
Gps
12
30
ηD
11
25
VDD = 28 Vdc, Pout = 33 W (Avg.), IDQ = 1300 mA
10
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
20
9
IRL 3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
−28 −10
8 −32 −15
7 IM3
6 ACPR
−36 −20
−40 −25
5 −44
2060 2080 2100 2120 2140 2160 2180 2200 2220
−30
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 33 Watts Avg.
14
IDQ = 1900 mA
1600 mA
13
1300 mA
12 1000 mA
11
700 mA
10
1
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
10 100 1000
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−25
−30
−35
IDQ = 700 mA
−40
−45
1900 mA
1600 mA
1300 mA
−50
1000 mA
−55
VDD = 28 Vdc
−60 f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
−65
1 10 100 1000
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
−25
−30 3rd Order
−35
−40
5th Order
−45
7th Order
−50
−55
−60
0.1
VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1300 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
1 10
100
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
58
Ideal
56 P3dB = 53.41 dBm (219.28 W)
54 P1dB = 52.73 dBm (187.5 W)
52
Actual
50 VDD = 28 Vdc, IDQ = 1300 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
48
35 37 39 41 43 45 47
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
RF Device Data
Freescale Semiconductor
MRF5S21150HR3 MRF5S21150HSR3
5
5 Page 
PACKAGE DIMENSIONS
B
B
(FLANGE)
K
G
1
2X Q
bbb M T A M B M
3
2
D
bbb M T A M B M
H
E
A
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
A
(FLANGE)
C
T
SEATING
PLANE
CASE 465B - 03
ISSUE D
NI - 880
MRF5S21150HR3
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.535 0.545
C 0.147 0.200
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.872 0.888
N 0.871 0.889
Q .118 .138
R 0.515 0.525
S 0.515 0.525
aaa 0.007 REF
bbb 0.010 REF
ccc 0.015 REF
MILLIMETERS
MIN MAX
33.91 34.16
13.6 13.8
3.73 5.08
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
22.15 22.55
19.30 22.60
3.00 3.51
13.10 13.30
13.10 13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
B
1
B
(FLANGE)
K2
D
bbb M T A M B M
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
H
C
E
A
A
(FLANGE)
T
SEATING
PLANE
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
CASE 465C - 02
ISSUE D
NI - 880S
MRF5S21150HSR3
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.905 0.915
B 0.535 0.545
C 0.147 0.200
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.872 0.888
N 0.871 0.889
R 0.515 0.525
S 0.515 0.525
aaa 0.007 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
22.99 23.24
13.60 13.80
3.73 5.08
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
22.15 22.55
19.30 22.60
13.10 13.30
13.10 13.30
0.178 REF
0.254 REF
0.381 REF
RF Device Data
Freescale Semiconductor
MRF5S21150HR3 MRF5S21150HSR3
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF5S21150HR3.PDF ] | |
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