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PG03DBTFC Schematic ( PDF Datasheet ) - KEC semiconductor

Teilenummer PG03DBTFC
Beschreibung TVS Diode
Hersteller KEC semiconductor
Logo KEC semiconductor Logo 




Gesamt 1 Seiten
PG03DBTFC Datasheet, Funktion
www.DataSheet4U.com
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG03DBTFC
TVS Diode for ESD
Protection in Portable Electronics
FEATURES
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 5A(tp=8/20 s)
Bidirectional Type Pin Configuration Structure.
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA’s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
CATHODE MARK
21
B
DIM MILLIMETERS
A A 1.00+_ 0.05
B 0.80+0.10/-0.05
C 0.60+_ 0.05
D 0.30+_ 0.05
E 0.40 MAX
F 0.13+_ 0.05
1. ANODE
2. CATHODE
TFSC
Marking
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20 s)
Junction Temperature
Storage Temperature
PPK
Tj
Tstg
RATING
50
-55 150
-55 150
UNIT
W
21
21
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
VRWM
VBR
IR
Junction Capacitance
CJ
TEST CONDITION
-
It=1mA
VRWM=3.3V
VR=0V, f=1MHz
MIN.
-
4.2
-
-
TYP.
-
-
-
-
MAX.
3.3
6.2
20
25
UNIT
V
V
A
pF
2005. 6. 8
Revision No : 0
1/1





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