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PDF HMC565 Data sheet ( Hoja de datos )
| Número de pieza | HMC565 | |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER | |
| Fabricantes | Hittite Microwave | |
| Logotipo |  |
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v00.0206
1
Typical Applications
The HMC565 is ideal for use as a LNA or driver ampli-
fier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
HMC565
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 6 - 20 GHz
Features
Noise Figure: 2.3 dB
Gain: 22 dB
OIP3: 20 dBm
Single Supply: +3V @ 53 mA
50 Ohm Matched Input/Output
Small size: 2.53 x 0.98 x 0.10 mm
Functional Diagram
General Description
The HMC565 is a high dynamic range GaAs PHEMT
MMIC Low Noise Amplifier (LNA) chip which operates
from 6 to 20 GHz. The HMC565 features 22 dB of small
signal gain, 2.3 dB of noise figure and has a consistent
IP3 of 20 dBm across the operating band. This self-
biased LNA is ideal for hybrid and MCM assemblies
due to its compact size, widband performance, single
+3V supply operation, and DC blocked RF I/O’s.
All data is measured with the chip in a 50 Ohm test
fixture connected via two 0.025 mm (1 mil) diameter
bondwires of minimal length 0.31 mm (12 mil).
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
Min.
20
7
17
Typ.
6 - 12
23
0.025
2.3
15
15
10
12
20
53
Max.
0.035
2.8
Min.
Typ.
Max.
Units
12 - 20
GHz
17 21
dB
0.025
0.035
dB/ °C
2.5 3.0 dB
12 dB
10 dB
7 10
dBm
12 dBm
17 20
dBm
53 mA
1 - 210
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
1
Pad Descriptions
Pad Number
Function
1 IN
v00.0206
HMC565
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 6 - 20 GHz
Description
This pad is AC coupled and matched to
50 Ohms from 6 - 20 GHz.
Interface Schematic
2, 3, 4
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
5
Die Bottom
OUT
GND
This pad is AC coupled and matched to
50 Ohms from 6 - 20 GHz.
Die Bottom must be connected to RF/DC ground.
Assembly Diagram
1 - 214
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC565.PDF ] | |
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