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Número de pieza | SSM6K06FU | |
Descripción | High Speed Switching Applications | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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SSM6K06FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K06FU
High Speed Switching Applications
Unit: mm
· Small package
· Low on resistance : Ron = 160 mΩ max (@VGS = 4 V)
: Ron = 210 mΩ max (@VGS = 2.5 V)
· Low gate threshold voltage
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS
VGSS
ID
IDP
PD
(Note 1)
Tch
Tstg
20
±12
1.1
2.2
300
150
-55~150
V
V
A
mW
°C
°C
Note 1: Mounted on FR4 board.
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.32 mm2 ´ 6) Figure 1.
JEDEC
―
JEITA
―
TOSHIBA
2-2J1D
Weight: 6.8 mg (typ.)
Marking
Equivalent Circuit (top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1 2003-03-28
1 page SSM6K06FU
Figure 1 25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm2 ´ 6
5 2003-03-28
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSM6K06FU.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM6K06FU | High Speed Switching Applications | Toshiba Semiconductor |
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