(PDF) SI3424DV Datasheet - N-Channel 30-V (D-S) MOSFET

Número de pieza	SI3424DV
Descripción	N-Channel 30-V (D-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! www.DataSheet4U.com New Product N-Channel 30-V (D-S) MOSFET Si3424DV Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.028 @ VGS = 10 V 0.038 @ VGS = 4.5 V ID (A) 6.7 5.7 3 mm TSOP-6 Top View 16 25 34 2.85 mm (1, 2, 5, 6) D (3) G (4) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 30 "20 6.7 5.0 5.4 4.0 30 1.7 1.0 2.0 1.14 1.3 0.73 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71317 S-02157—Rev. A, 02-Oct-00 Symbol RthJA RthJF Typical 40 90 25 Maximum 62.5 110 30 Unit _C/W www.vishay.com 1 1 page

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PDF SI3424DV Data sheet ( Hoja de datos )