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GWM70-01P2 Schematic ( PDF Datasheet ) - IXYS Corporation

Teilenummer GWM70-01P2
Beschreibung Three phase output MOSFET Modules
Hersteller IXYS Corporation
Logo IXYS Corporation Logo 




Gesamt 2 Seiten
GWM70-01P2 Datasheet, Funktion
www.DataSheet4U.com
Advanced Technical Information
GWM 70-01P2
Three phase full bridge
with Trench MOSFETs
in DCB isolated high current package
VDSS = 100 V
ID25 = 70 A
RDSon typ. = 11 m
L+
G3 G5
G1
S3 S5
S1
L1
L2
L3
G4 G6
G2
S4 S6
S2
L-
MOSFETs
Symbol
VDSS
VGS
ID25
ID90
IF25
IF90
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
TC = 25°C (diode)
TC = 90°C (diode)
Maximum Ratings
100 V
±20 V
70 A
50 A
130 A
85 A
Symbol
RDSon
VGSth
I
DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VF
trr
RthJC
RthJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
on chip level at
TVJ = 25°C
VGS = 10 V; ID = 35 A TVJ = 125°C
VDS = 20 V; ID = 1 mA
V
DS
=
V;
DSS
V
GS
=
0
V;
TVJ
=
25°C
TVJ = 125°C
VGS = ±20 V; VDS = 0 V
VGS= 10 V; VDS = 80 V; ID = 25 A
11
24
2
0.1
110
18
44
14 m
m
4V
1 µA
mA
0.2 µA
nC
nC
nC
VGS= 10 V; VDS = 30 V;
ID = 25 A; RG = 10
35 ns
85 ns
150 ns
70 ns
(diode) IF = 35 A; VGS= 0 V
(diode) IF = 75 A; -di/dt = 100 A/µs; VDS = 30 V
with heat transfer paste
0.8 1.25 V
80 ns
0.85 K/W
1.7 K/W
Gate Pins
Power Pins
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
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