PDF MRF9045LR1 Data sheet ( Hoja de datos )

Número de pieza	MRF9045LR1
Descripción	RF Power Field Effect Transistors
Fabricantes	Freescale Semiconductor
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No Preview Available ! www.DataSheet4U.com Freescale Semiconductor Technical Data RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen- cies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applica- tions in 28 volt base station equipment. • Typical Two−Tone Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 18.8 dB Efficiency — 42% IMD — −32 dBc • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal Impedance Parameters • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. MRF9045 Rev. 9, 12/2004 MRF9045LR1 MRF9045LSR1 945 MHz, 45 W, 28 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFETs CASE 360B−05, STYLE 1 NI−360 MRF9045LR1 Table 1. Maximum Ratings Rating Drain−Source Voltage Gate−Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model MRF9045LR1 MRF9045LSR1 MRF9045LR1 MRF9045LSR1 Symbol VDSS VGS PD Tstg TJ Symbol RθJC CASE 360C−05, STYLE 1 NI−360S MRF9045LSR1 Value −0.5, +65 −0.5, + 15 125 0.71 175 1 −65 to +150 200 Unit Vdc Vdc W W/°C °C °C Value 1.4 1.0 Unit °C/W Class 1 (Minimum) M1 (Minimum) NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2004. All rights reserved. RF Device Data Freescale Semiconductor MRF9045LR1 MRF9045LSR1 5−1 1 page TYPICAL CHARACTERISTICS 20 19 Gps 55 50 18 h 17 16 15 IMD 14 IRL 13 12 930 935 VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 350 mA Two-Tone Measurement, 100 kHz Tone Spacing 940 945 950 f, FREQUENCY (MHz) 45 40 -30 -32 -34 -36 -38 955 960 Figure 3. Class AB Broadband Circuit Performance -12 -14 -16 20.0 19.5 IDQ = 525 mA 19.0 400 mA 18.5 350 mA 18.0 300 mA 17.5 17.0 16.5 0.5 VDD = 28 Vdc f1 = 945 MHz 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power -10 VDD = 28 Vdc -20 f1 = 945 MHz f2 = 945.1 MHz -30 -40 IDQ = 300 mA -50 -60 350 mA 400 mA 525 mA -70 0.5 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power -10 VDD = 28 Vdc -20 IDQ = 350 mA f1 = 945 MHz -30 f2 = 945.1 MHz -40 3rd Order -50 -60 5th Order -70 -80 -90 0.5 7th Order 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power RF Device Data Freescale Semiconductor 20 19 18 17 16 15 14 13 0.1 70 Gps 60 50 40 30 h VDD = 28 Vdc IDQ = 350 mA f1 = 945 MHz 1 10 Pout, OUTPUT POWER (WATTS) PEP 20 10 0 100 Figure 7. Power Gain, Efficiency versus Output Power MRF9045LR1 MRF9045LSR1 5−5 5 Page

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