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PDF PMF3800SN Data sheet ( Hoja de datos )
| Número de pieza | PMF3800SN | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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PMF3800SN
N-channel TrenchMOS standard level FET
Rev. 02 — 1 July 2005
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
s Logic level compatible
s Very fast switching
s Subminiature surface-mounted package s Gate-source ESD protection diodes
1.3 Applications
s Relay driver
s High-speed line driver
1.4 Quick reference data
s VDS ≤ 60 V
s RDSon ≤ 4.5 Ω
s ID ≤ 260 mA
s Ptot ≤ 0.56 W
2. Pinning information
Table 1:
Pin
1
2
3
Pinning
Description
gate (G)
source (S)
drain (D)
Simplified outline
3
12
Symbol
G
D
SOT323 (SC-70)
S
03ab60
1 page  
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
V(BR)GSS gate-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS drain leakage current
IGSS
RDSon
gate leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
IG = ±1 mA; VDS = 0 V
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 48 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±10 V; VDS = 0 V
VGS = 10 V; ID = 500 mA; Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 4.5 V; ID = 200 mA; Figure 6 and 8
QG(tot) total gate charge
QGS gate-source charge
QGD gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
ton turn-on time
toff turn-off time
Source-drain diode
ID = 0.5 A; VDS = 48 V; VGS = 10 V;
Figure 11
VGS = 0 V; VDS = 10 V; f = 1 MHz;
Figure 13
VDS = 50 V; RL = 250 Ω; VGS = 10 V;
RG = 50 Ω; RGS = 50 Ω
VSD source-drain (diode forward) voltage IS = 300 mA; VGS = 0 V; Figure 12
trr reverse recovery time
Qr recovered charge
IS = 300 mA; dIS/dt = −100 A/µs;
VGS = 0 V; VR = 25 V
Min Typ Max Unit
60 -
-
55 -
-
16 22 -
V
V
V
12
0.6 -
--
-V
-V
3.5 V
- - 1 µA
- - 10 µA
- 50 500 nA
- 2.8 4.5 mΩ
- 5.2 8.4 mΩ
- 3.8 5.3 mΩ
- 0.85 - nC
- 0.55 - nC
- 0.07 - nC
- 13 40 pF
- 8 30 pF
- 4 10 pF
- 3 - ns
- 9 - ns
- 0.93 1.5 V
- 30 - ns
- 30 - nC
9397 750 15218
Product data sheet
Rev. 02 — 1 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 12
5 Page 
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
9. Data sheet status
Level Data sheet status [1] Product status [2] [3]
I Objective data
Development
II Preliminary data
Qualification
III Product data
Production
Definition
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
12. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 15218
Product data sheet
Rev. 02 — 1 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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