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PDF NID6002N Data sheet ( Hoja de datos )
| Número de pieza | NID6002N | |
| Descripción | Self-Protected FET | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NID6002N
Preferred Device
Self−Protected FET
with Temperature and
Current Limit
65 V, 6.5 A, Single N−Channel, DPAK
HDPlus™ devices are an advanced series of power MOSFETs
which utilize ON Semiconductor’s latest MOSFET technology
process to achieve the lowest possible on−resistance per silicon area
while incorporating smart features. Integrated thermal and current
limits work together to provide short circuit protection. The devices
feature an integrated Drain−to−Gate Clamp that enables them to
withstand high energy in the avalanche mode. The Clamp also
provides additional safety margin against unexpected voltage
transients. Electrostatic Discharge (ESD) protection is provided by an
integrated Gate−to−Source Clamp.
Features
• Short Circuit Protection/Current Limit
• Thermal Shutdown with Automatic Restart
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection
• Pb−Free Package is Available
http://onsemi.com
VDSS
(Clamped)
65 V
RDS(on) TYP
210 mW
ID TYP
(Limited)
6.5 A
Drain
Gate
Input
Overvoltage
Protection
RG
MPWR
ESD Protection
Temperature Current Current
Limit
Limit Sense
DPAK
CASE 369C
STYLE 2
Source
MARKING
DIAGRAM
1 YYW
2 D6
3 002NG
D6002N = Device Code
Y = Year
WW = Work Week
G = Pb−Free Device
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
Package
Shipping†
NID6002NT4
DPAK 2500/Tape & Reel
NID6002NT4G
DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
Publication Order Number:
NID6002N/D
1 page  
NID6002N
TYPICAL PERFORMANCE CURVES
8
7
VGS = 0 V
TJ = 25°C
6
5
4
3
2
1
0
0.0 0.2 0.4 0.6 0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.0
Figure 7. Diode Forward Voltage vs. Current
12000
10000
VDS = 0 V
TJ = 160°C
8000
6000
4000
2000
0
6 6.5 7 7.5 8 8.5 9 9.5 10 10.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Input Current vs. Gate Voltage
12
10 VGS = 10 V
8
VGS = 5 V
6
4
Current
Limit
Temperature
Limit
2
0
0E+0
1E−3
2E−3 3E−3 4E−3 5E−3
TIME (seconds)
6E−3 7E−3
Figure 9. Short Circuit Response*
*(Actual thermal cycling response in short circuit dependent on device
power level, thermal mounting, and ambient temperature conditions)
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NID6002N.PDF ] | |
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