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PDF NGB8207N Data sheet ( Hoja de datos )
| Número de pieza | NGB8207N | |
| Descripción | Ignition IGBT | |
| Fabricantes | ON Semiconductor | |
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NGB8207N, NGB8207BN
Ignition IGBT
20 A, 365 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Minimum Avalanche Energy − 500 mJ
• Gate Resistor (RG) = 70 W
• These are Pb−Free Devices
Applications
• Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
Continuous Gate Current
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)
ESD (Charged−Device Model)
VCES
VGE
IC
IG
IG
ESD
365
$15
20
50
1.0
20
2.0
V
V
AADACC
mA
mA
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
Total Power Dissipation @ TC = 25°C
Derate above 25°C (Note 1)
PD 165 W
1.1 W/°C
Operating & Storage Temperature Range
TJ, Tstg
−55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Assuming infinite heatsink Case−to−Ambient
© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 1
1
http://onsemi.com
20 AMPS, 365 VOLTS
VCE(on) = 1.5 V Typ @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
D2PAK
CASE 418B
STYLE 4
1 MARKING DIAGRAM
4
Collector
NGB
8207xG
AYWW
13
Gate
2
Emitter
Collector
NGB8207x = Device Code
x = N or B
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NGB8207NT4G D2PAK 800 / Tape & Reel
(Pb−Free)
NGB8207BNT4G D2PAK 800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGB8207N/D
1 page  
NGB8207N, NGB8207BN
TYPICAL ELECTRICAL CHARACTERISTICS
60
10 V
50
6.5 V
6.0 V
40
5.5 V 5.0 V
60
VCE ≥ 5.0 V
50
40
TJ = −40°C
TJ = 25°C
TJ = 175°C
30 30
20 20
10
0 VGE = 2.0 V
0 1 2 3 4 5 6 7 8 9 10
VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 7. On−Region Characteristics
@ TJ = 1755C
100,000
10,000
1000
VCE = −24 V
100
VCE = 320 V
10
10
0
1.0
2.0 3.0 4.0 5.0
VGE, GATE−TO−EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
2.0
MEAN + 4s
1.75
1.5
MEAN − 4s
1.25
1.0
0.75
MEAN
6.0
1
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Collector−to−Emitter Leakage
Current vs. Temperature
0.5
−50 −25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
175
Figure 10. Gate Threshold Voltage vs.
Temperature
10,000
1000
TJ = 25°C
VGE = 0 V
Ciss
100
10
1
0
Coss
Crss
20 40 60 80 100 120 140 160 180 200
COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 11. Capacitance Variation
100
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 10 A
10
1
tf
td(off)
tr
td(on)
0.1
25
50
75 100 125 150 175
TEMPERATURE (°C)
Figure 12. Resistive Switching Time Variation
vs. Temperature
http://onsemi.com
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NGB8207N.PDF ] | |
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