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Teilenummer | KHB7D5N60F1 |
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Beschreibung | (KHB7D5N60F1 / KHB7D5N60P1) High Voltage MOSFETs | |
Hersteller | KEC semiconductor | |
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Gesamt 7 Seiten www.DataSheet4U.com
SEMICONDUCTOR
TECHNICAL DATA
KHB011N40P1/F1
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 400V, ID= 10.5A
Drain-Source ON Resistance :
RDS(ON)=0.53 @VGS =10V
Qg(typ.) =32.5nC
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB011N40P1 KHB011N40F1
Drain-Source Voltage
VDSS 400 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
ID
IDP
EAS
EAR
dv/dt
PD
10.5 10.5*
6.6 6.6*
42 42*
360
13.5
4.5
135 44
1.07 0.35
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.93
2.86 /W
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
- /W
62.5 /W
TO-220AB
A
E
P
K
L
D
MM
F
B
G
C
O
JQ
H
N 123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_0.1
E 3.18 +_ 0.1
F 3.3 +_0.1
G 12.57 +_ 0.2
H 0.5 +_0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 2.54 +_ 0.2
N 4.7 +_ 0.2
O 6.68 +_ 0.2
P 6.5
Q 2.76 +_ 0.2
TO-220IS
D
G
2006. 1. 17
Revision No : 0
S
1/7
www.DataSheet4U.com
KHB011N40P1/F1
- Gate Charge
Fast
Recovery
ID Diode
0.8 VDSS
1.0 mA
VGS
ID
VDS
VGS
10 V
Qgs
Qgd
Qg
Q
- Single Pulsed Avalanche Energy
0.5 VDSS
25Ω
10 V
VGS
- Resistive Load Switching
BVDSS
L
IAS
VDS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
tp
0.5 VDSS
25 Ω
10V VGS
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
tf
td(off)
toff
VDS(t)
Time
2006. 1. 17
Revision No : 0
6/7
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ KHB7D5N60F1 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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