|
|
Teilenummer | BF1206F |
|
Beschreibung | Dual N-channel dual-gate MOS-FET | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 20 Seiten www.DataSheet4U.com
BF1206F
Dual N-channel dual gate MOSFET
Rev. 01 — 30 January 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared
source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic
package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Two low noise gain controlled amplifiers in a single package
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio
s Suited for 3 volt applications
1.3 Applications
s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 3 V supply voltage, such as digital and analog
television tuners
www.DataSheet4U.com
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
100
IG1
(µA)
80
60
40
001aad898
(1)
(2)
(3)
20
(4)
0
0 0.5 1.0 1.5 2.0 2.5
VG1−S (V)
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(A) = 2.8 V; Tj = 25 °C.
Fig 4. Amplifier A: gate1 current as a function of
gate1 voltage; typical values
16
ID
(mA)
12
001aad900
8
4
40
Yfs
(mS)
30
20
001aad899
(1)
(2)
10
(4)
(3)
0
0 4 8 12 16
ID (mA)
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(A) = 2.8 V; Tj = 25 °C.
Fig 5. Amplifier A: forward transfer admittance as a
function of drain current; typical values
6
ID
(mA)
4
001aad901
2
0
0 10 20 30
IG1 (µA)
0
0123
VGG (V)
VDS(A) = 2.8 V; VG2-S = 2.5 V, Tamb = 25 °C.
Fig 6. Amplifier A: drain current as a function of gate1
current; typical values
VDS(A) = 2.8 V; VG2 = 2.5 V; RG1(A) = 270 kΩ; see
Figure 32.
Fig 7. Amplifier A: drain current as a function of gate1
supply voltage (=VGG); typical values
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
6 of 20
6 Page www.DataSheet4U.com
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
100
IG1
(µA)
80
60
40
001aad913
(1)
(2)
(3)
20
(4)
0
0 0.5 1.0 1.5 2.0 2.5
VG1−S (V)
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(B) = 2.8 V; Tj = 25 °C.
Fig 19. Amplifier B: gate1 current as a function of
gate1 voltage; typical values
16
ID
(mA)
12
001aad915
8
4
40
Yfs
(mS)
30
20
001aad914
(1)
(2)
10
(4)
(3)
0
0 4 8 12 16
ID (mA)
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(B) = 2.8 V; Tj = 25 °C.
Fig 20. Amplifier B: forward transfer admittance as a
function of drain current; typical values
6
ID
(mA)
4
001aad916
2
0
0 10 20 30
IG1 (µA)
0
0123
VGG (V)
VDS(B) = 2.8 V; VG2-S = 2.5 V, Tamb = 25 °C.
Fig 21. Amplifier B: drain current as a function of gate1
current; typical values
VDS(B) = 2.8 V; VG2-S = 2.5 V; RG1(B) = 220 kΩ;
see Figure 32.
Fig 22. Amplifier B: drain voltage as a function of gate1
supply voltage (=VGG); typical values
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
12 of 20
12 Page | ||
Seiten | Gesamt 20 Seiten | |
PDF Download | [ BF1206F Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
BF1206 | Dual N-channel dual-gate MOS-FET | NXP Semiconductors |
BF1206F | Dual N-channel dual-gate MOS-FET | NXP Semiconductors |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |