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BF1206F Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer BF1206F
Beschreibung Dual N-channel dual-gate MOS-FET
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 20 Seiten
BF1206F Datasheet, Funktion
www.DataSheet4U.com
BF1206F
Dual N-channel dual gate MOSFET
Rev. 01 — 30 January 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared
source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic
package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Two low noise gain controlled amplifiers in a single package
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio
s Suited for 3 volt applications
1.3 Applications
s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 3 V supply voltage, such as digital and analog
television tuners






BF1206F Datasheet, Funktion
www.DataSheet4U.com
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
100
IG1
(µA)
80
60
40
001aad898
(1)
(2)
(3)
20
(4)
0
0 0.5 1.0 1.5 2.0 2.5
VG1S (V)
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(A) = 2.8 V; Tj = 25 °C.
Fig 4. Amplifier A: gate1 current as a function of
gate1 voltage; typical values
16
ID
(mA)
12
001aad900
8
4
40
Yfs
(mS)
30
20
001aad899
(1)
(2)
10
(4)
(3)
0
0 4 8 12 16
ID (mA)
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(A) = 2.8 V; Tj = 25 °C.
Fig 5. Amplifier A: forward transfer admittance as a
function of drain current; typical values
6
ID
(mA)
4
001aad901
2
0
0 10 20 30
IG1 (µA)
0
0123
VGG (V)
VDS(A) = 2.8 V; VG2-S = 2.5 V, Tamb = 25 °C.
Fig 6. Amplifier A: drain current as a function of gate1
current; typical values
VDS(A) = 2.8 V; VG2 = 2.5 V; RG1(A) = 270 k; see
Figure 32.
Fig 7. Amplifier A: drain current as a function of gate1
supply voltage (=VGG); typical values
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
6 of 20

6 Page









BF1206F pdf, datenblatt
www.DataSheet4U.com
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
100
IG1
(µA)
80
60
40
001aad913
(1)
(2)
(3)
20
(4)
0
0 0.5 1.0 1.5 2.0 2.5
VG1S (V)
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(B) = 2.8 V; Tj = 25 °C.
Fig 19. Amplifier B: gate1 current as a function of
gate1 voltage; typical values
16
ID
(mA)
12
001aad915
8
4
40
Yfs
(mS)
30
20
001aad914
(1)
(2)
10
(4)
(3)
0
0 4 8 12 16
ID (mA)
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(B) = 2.8 V; Tj = 25 °C.
Fig 20. Amplifier B: forward transfer admittance as a
function of drain current; typical values
6
ID
(mA)
4
001aad916
2
0
0 10 20 30
IG1 (µA)
0
0123
VGG (V)
VDS(B) = 2.8 V; VG2-S = 2.5 V, Tamb = 25 °C.
Fig 21. Amplifier B: drain current as a function of gate1
current; typical values
VDS(B) = 2.8 V; VG2-S = 2.5 V; RG1(B) = 220 k;
see Figure 32.
Fig 22. Amplifier B: drain voltage as a function of gate1
supply voltage (=VGG); typical values
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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