|
|
Número de pieza | BF1206 | |
Descripción | Dual N-channel dual-gate MOS-FET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BF1206 (archivo pdf) en la parte inferior de esta página. Total 21 Páginas | ||
No Preview Available ! www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1206
Dual N-channel dual-gate
MOS-FET
Product specification
2003 Nov 17
1 page Philips Semiconductors
Dual N-channel dual-gate MOS-FET
Product specification
BF1206
DYNAMIC CHARACTERISTICS AMPLIFIER a
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 18 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-ss
Cig2-ss
Coss
Crss
NF
Gtr
Xmod
forward transfer admittance pulsed; Tj = 25 °C
33 38 48
input capacitance at gate 1 f = 1 MHz
− 2.4 2.9
input capacitance at gate 2 f = 1 MHz
− 3.2 −
output capacitance
f = 1 MHz
− 1.1 −
reverse transfer capacitance f = 1 MHz
− 15 30
noise figure
f = 11 MHz; GS = 20 mS; BS = 0
−3−
f = 400 MHz; YS = YS opt
− 1.3 1.9
f = 800 MHz; YS = YS opt
− 1.6 2.2
power gain
f = 200 MHz; GS = 2 mS; BS = BS opt;
GL = 0.5 mS; BL = BL opt; note 1
−
35 −
f = 400 MHz; GS = 2 mS; BS = BS opt;
GL = 1 mS; BL = BL opt; note 1
−
30 −
f = 800 MHz; GS = 3.3 mS; BS = BS opt;
GL = 1 mS; BL = BL opt; note 1
−
23 −
cross-modulation
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 2
at 0 dB AGC
90 −
−
at 10 dB AGC
− 92 −
at 40 dB AGC
102 105 −
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBµV
dBµV
dBµV
Notes
1. Calculated from measured s-parameters.
2. Measured in Fig.35 test circuit.
2003 Nov 17
5
5 Page Philips Semiconductors
Dual N-channel dual-gate MOS-FET
Product specification
BF1206
Amplifier a scattering parameters
VDS = 5 V; VG2-S = 4 V; ID = 18 mA; Tamb = 25 °C
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
50
100
200
300
400
500
600
700
800
900
1 000
0.988
0.984
0.971
0.951
0.926
0.896
0.865
0.832
0.797
0.769
0.732
−4.62
−9.23
−18.33
−27.32
−36.04
−44.50
−52.63
−60.47
−67.66
−75.01
−81.73
3.72
3.71
3.66
3.58
3.47
3.36
3.23
3.09
2.91
2.83
2.67
ANGLE
(deg)
174.72
169.42
159.05
148.77
138.74
129.05
119.67
110.43
101.40
93.09
84.05
s12
MAGNITUDE
(ratio)
0.0008
0.0015
0.0029
0.0038
0.0044
0.0046
0.0043
0.0038
0.0028
0.0051
0.0071
ANGLE
(deg)
86.73
84.39
79.96
76.62
74.42
74.84
79.73
92.63
118.47
146.61
159.78
s22
MAGNITUDE
(ratio)
0.991
0.989
0.986
0.980
0.973
0.965
0.958
0.951
0.937
0.940
0.937
ANGLE
(deg)
−2.07
−4.16
−8.24
−12.32
−16.33
−20.25
−24.20
−28.14
−32.14
−35.76
−39.86
Noise data
VDS = 5 V; VG2-S = 4 V; ID = 18 mA; Tamb = 25 °C
f
(MHz)
Fmin
(dB)
400 1.3
800 1.6
(ratio)
0.618
0.593
Γopt
(deg)
22.7
44.1
Rn
(Ω)
26.7
29.7
2003 Nov 17
11
11 Page |
Páginas | Total 21 Páginas | |
PDF Descargar | [ Datasheet BF1206.PDF ] |
Número de pieza | Descripción | Fabricantes |
BF1201 | N-channel dual-gate PoLo MOS-FETs | NXP Semiconductors |
BF1201R | N-channel dual-gate PoLo MOS-FETs | NXP Semiconductors |
BF1201WR | N-channel dual-gate PoLo MOS-FETs | NXP Semiconductors |
BF1202 | N-channel dual-gate PoLo MOS-FETs | NXP Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |