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PDF MSD42WT1 Data sheet ( Hoja de datos )
| Número de pieza | MSD42WT1 | |
| Descripción | NPN GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS SURFACE MOUNT | |
| Fabricantes | Motorola Semiconductors | |
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SEMICONDUCTOR TECHNICAL DATA
Preliminary Information
NPN Silicon General Purpose
High Voltage Transistor
This NPN Silicon Planar Transistor is designed for general purpose amplifier
applications. This device is housed in the SC-70/SOT-323 package
which is designed for low power surface mount applications.
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
Order this document
by MSD42WT1/D
MSD42WT1
Motorola Preferred Devices
NPN GENERAL PURPOSE
HIGH VOLTAGE
TRANSISTORS
SURFACE MOUNT
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
1
2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current — Continuous
DEVICE MARKING
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
300
300
6.0
150
Vdc
Vdc
Vdc
mAdc
CASE 419–02, STYLE 3
SC–70/SOT–323
COLLECTOR
3
MSD42WT1 = H1D
THERMAL CHARACTERISTICS
Rating
Power Dissipation(1)
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Symbol
PD
TJ
Tstg
Max
150
150
– 55 ~ + 150
Unit
mW
°C
°C
1
BASE
2
EMITTER
Characteristic
Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
—
Vdc
Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0)
V(BR)CBO
300
—
Vdc
Emitter-Base Breakdown Voltage (IE = 100 µAdc, IE = 0)
V(BR)EBO
6.0
—
Vdc
Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0)
ICBO
— 0.1 µA
Emitter–Base Cutoff Current (VEB = 6.0 Vdc, IB = 0)
DC Current Gain(2)
(VCE = 10 Vdc, IC = 1.0 mAdc)
(VCE = 10 Vdc, IC = 30 mAdc)
Collector-Emitter Saturation Voltage(2) (IC = 200 mAdc, IB = 2.0 mAdc)
IEBO
hFE1
hFE2
VCE(sat)
—
25
40
—
0.1 µA
—
—
—
0.5 Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
REV 1
©MMoototorroollaa, ISncm. 1a9l9l–7Signal Transistors, FETs and Diodes Device Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MSD42WT1.PDF ] | |
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