IRL3502SPBF Datasheet PDF - International Rectifier
| Part Number | IRL3502SPBF | |
| Description | HEXFET Power MOSFET | |
| Manufacturers | International Rectifier | |
| Logo |  |
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l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
l Lead-Free
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
G
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 95126
IRL3502SPbF
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.007Ω
S ID = 110A
D 2 Pak
Max.
110
67
420
140
1.1
± 10
14
390
64
14
5.0
-55 to + 150
300 (1.6mm from case )
Typ.
Max.
0.89
40
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Units
°C/W
3/18/04
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IRL3502SPbF
120
100
80
60
40
20
0
25
LIMITED BY PACKAGE
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
800 ID
TOP 29A
40A
BOTTOM 64A
600
400
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRL3502SPBF electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRL3502SPBF.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| IRL3502SPBF | The function is HEXFET Power MOSFET. International Rectifier | |
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