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PDF SI7842DP Data sheet ( Hoja de datos )
| Número de pieza | SI7842DP | |
| Descripción | Dual N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si7842DP
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.022 @ VGS = 10 V
0.030 @ VGS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
30 0.50 V @ 1.0 A
ID (A)
10
8.5
IF (A)
3.0
FEATURES
D LITTLE FOOT Plust Schottky
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% Rg Tested
APPLICATIONS
D Bus and Logic DC-DC
PowerPAK SO-8
6.15 mm
D1
8
D1
7
D2
6 D2
5
S1
1
G1
2
5.15 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7842DP-T1
D1 D2
Schottky Diode
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
10 6.3
6.0 5.0
30
2.9 1.1
3.5 1.4
2.2 0.9
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71617
S-31728—Rev. B, 18-Aug-03
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJC
MOSFET
Typ Max
26 35
60 85
3.9 5.5
Schottky
Typ Max
26 35
60 85
3.9 5.5
Unit
_C/W
www.vishay.com
1
1 page  
Si7842DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
MOSFET
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 5
10 - 4
10 - 3
10 - 2
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
10
10
1
10 - 1
1
SCHOTTKY
Forward Voltage Drop
TJ = 150_C
0.1
0.01
30 V
24 V
TJ = 25_C
0.001
0.0001
0
200
25 50 75 100 125 150
TJ - Temperature (_C)
Capacitance
1
0.0 0.3 0.6 0.9 1.2 1.5
VF - Forward Voltage Drop (V)
160
120
80
Coss
40
0
0 6 12 18 24
VDS - Drain-to-Source Voltage (V)
Document Number: 71617
S-31728—Rev. B, 18-Aug-03
30
www.vishay.com
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI7842DP.PDF ] | |
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