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IR1166SPBF Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer IR1166SPBF
Beschreibung SmartRectifier Control IC
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 15 Seiten
IR1166SPBF Datasheet, Funktion
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Data Sheet PD-97237
IR1166SPbF
SmartRectifierTM CONTROL IC
Features
• Secondary side high speed SR controller
• DCM, CrCM and CCM flyback topologies
• 200V proprietary IC technology
• Max 500KHz switching frequency
• Anti-bounce logic and UVLO protection
• 4A peak turn off drive current
• Micropower start-up & ultra low quiescent current
• 10.7V gate drive clamp
• 50ns turn-off propagation delay
• Vcc range from 11.3V to 20V
• Direct sensing of MOSFET drain voltage
• Minimal component count
• Simple design
• Lead-free
• Compatible with 1W Standby, Energy Star, CECP, etc.
Description
Package
IR1166S is a smart secondary side driver IC designed to drive N-Channel power MOSFETs
used as synchronous rectifiers in isolated Flyback converters.
The IC can control one or more paralleled N-MOSFETs to emulate the behavior of Schottky
diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity
of the current and turn the power switch on and off in proximity of the zero current transi-
tion.
Ruggedness and noise immunity are accomplished using an advanced blanking scheme
and double-pulse suppression which allow reliable operation in continuous, discontinuous
8-Lead SOIC
and critical current mode operation and both fixed and variable frequency modes.
IR1166S Application Diagram
Vin
Rs
Cs
Ci
Rdc
XFM
U1
Cdc
1 VCC VGATE 8
2 OVT GND 7
3 MOT
VS 6
RMOT
4 EN
VD 5
IR1166S
Rg
Co
Rtn Q1
*Please note that this data sheet contains advanced information that could change before the product is released to production.
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IR1166SPBF Datasheet, Funktion
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IR1166S
Detailed Pin Description
GND: Ground
This is ground potential pin of the integrated control
circuit. The internal devices and gate driver are
referenced to this point.
MOT: Minimum On Time
The MOT programming pin controls the amount of
minimum on time. Once VTH2 is crossed for the first
time, the gate signal will become active and turn on
the power FET. Spurious ringings and oscillations can
trigger the input comparator off. The MOT blanks the
input comparator keeping the FET on for a minimum
time.
The MOT is programmed between 200ns and 3us
(typ.) by using a resistor referenced to GND.
OVT: Offset Voltage Trimming
The OVT pin will program the amount of input offset
voltage for the turn-off threshold VTH1.
The pin can be optionally tied to ground, to VCC or
left floating, to select 3 ranges of input offset trimming.
This programming feature allows for accomodating
different RDSon MOSFETs.
GATE: Gate Drive Output
This is the gate drive output of the IC. Drive voltage
is internally limited and provides 2A peak source and
5A peak sink capability. Although this pin can be
directly connected to the power MOSFET gate, the
use of minimal gate resistor is recommended,
expecially when putting multiple FETs in parallel.
Care must be taken in order to keep the gate loop as
short and as small as possible in order to achieve
optimal switching performance.
kelvin contact as close as possible to the power
MOSFET source pin.
VD: Drain Voltage Sense
VD is the voltage sense pin for the power MOSFET
Drain. This is a high voltage pin and particular care
must be taken in properly routing the connection to
the power MOSFET drain.
Additional filtering and or current limiting on this pin is
not recommended as it would limit switching perfor-
mance of the IC.
VCC: Power Supply
This is the supply voltage pin of the IC and it is
monitored by the under voltage lockout circuit. It is
possible to turn off the IC by pulling this pin below the
minimum turn off threshold voltage, without damage
to the IC.
To prevent noise problems, a bypass ceramic
capacitor connected to Vcc and GND should be placed
as close as possible to the IR1166S.
This pin is internally clamped.
EN: Enable
This pin is used to activate the IC “sleep” mode by
pulling the voltage level below 2.5V (typ). In sleep
mode the IC will consume a minimum amount of cur-
rent. However all switching functions will be disabled
and the gate will be inactive.
VS: Source Voltage Sense
VS is the differential sense pin for the power MOSFET
Source. This pin must not be connected directly to
the power ground pin (7) but must be used to create a
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IR1166SPBF pdf, datenblatt
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4
3
2
1
0
-50
RMOT = 5k
RMOT= 75k
0 50 100
Temperature ( °C )
150
Fig 9. MOT vs. Temp.
IR1166S
50
25
TJ= -25°C
TJ= 25°C
TJ= 125°C
0
0 50 100 150 200
Drain Sense Voltage (VD) (V)
Fig 10. Input Bias Current vs. VD.
20
Csync = 2nF
19 Csync = 5nF
Csync = 8nF
18 Csync = 15nF
Csync = 20nF
17
16
15
14
13
12
11
50 100 150 200 250 300 350 400 450 500
Max. Synchronous HEXFET Switching Frequency (kHz)
Fig 11. Max. VCC Voltage vs. Synchronous Rectifier
Switching Freq, TJ=125°C, TIC = 85°C, external RG=1W,
1HEXFET Gate Resistance included
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20
Csync = 2nF
19 Csync = 5nF
Csync = 8nF
18 Csync = 15nF
Csync = 20nF
17
16
15
14
13
12
11
50 100 150 200 250 300 350 400 450 500
Max. Synchronous HEXFET Switching Frequency (kHz)
Fig 12. Max. VCC Voltage vs. Synchronous Rectifier
Switching Freq, TJ=125°C, TIC = 85°C, external RG=2W,
1HEXFET Gate Resistance included
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