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Teilenummer | IM29LV001B |
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Beschreibung | Flash Memory | |
Hersteller | ETC | |
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Gesamt 14 Seiten www.DataSheet4U.com
Preliminary Specification
IMT
IM29LV001T and IM29LV001B
1 M Bit (128K x 8) 3.3V-Only Flash Memory
Features:
• 0.40 µm, triple-poly double-metal CMOS
process
• Single power supply operation
3.3V ± 10% for both read and write
• High endurance
> 10,000 program/erase cycles
• Fast read access time
70 and 90 ns
• Single page erasability for optimal data
alterability
Page size: 512 bytes
• Hardwired data protection
Inhibits program and erase operations of
the top (IM29LV001T) or bottom
(IM29LV001B) 32 pages of the array for
false write and virus prevention.
• Flexible boot block configurability
• Fast program and erase operations:
Byte program : < 35 µsec typical
General Descriptions
The IM29LV001T/B is a 1 Mega-bit, 5V-only
page erasable flash memory organized as
128K X 8 bits.It is manufactured with IMT’s
proprietary double metal, 0.40 µm CMOS
flash technology. High performance cell
design and advanced process technology
attain better reliability, manufacturability,
circuit performance and future scaleability
than other alternative approaches. Fast,
self-timed program/erase operations are
made possible with an innovative cell and
array architecture which is free from the
over-erase problem of the traditional
stacked-gate structures.
Single page (512 bytes) data alterability
ensures optimum flexibility and efficiency in
program codes, parameters and data
storage. It also allows backward compatibility
Page erase : < 7 msec typical
Chip erase : < 2 sec typical
• Self-timed program/erase operations
with end-of-cycle detection
Data# Polling and Toggle Bit
• Inadvertent write protection
Glitch filtering for WE# and CE#
Low Vcc (< 2.2 V ) write inhibit
Hardwired data protection
• Low Icc for power conservation
Read: 6 ma typical
Write: 10 ma typical
Stand-by: 10 µA typical
• Compatible with JEDEC byte wide pin-
out and single-supply flash command
standards
• Package types:
32-pin PLCC, TSOP and PDIP
Others available upon request
to other large-erase-block based flash
products for direct replacement.
The IM29LV001T/B is designed with
interface features for direct in-system
programming and erase operations. Vendor
re-programmable, hardwired data protection
is provided for absolute prevention in
inadvertent data alteration and virus
infection.
The IM29LV001 conforms to the JEDEC byte
wide memory pin-out and single supply flash
command standards.
Designed, manufactured and tested for
extended endurance applications, the
IM29LV001 is specified for more than 104
cycling endurance and greater than 10 years
of data retention.
This advanced data sheet contains product specifications which are subject to change without notice. Rev. 0.27
Integrated Memory Technologies, Inc.
2285 Martin Ave., STE A, Santa Clara, CA 95050. Tel. (408) 986-1088 Fax (408) 727-8696
Preliminary Specification
IMT
Absolute Maximum Ratings
Storage temperature…… -65°C to +150 °C
Ambient temperature with power
applied…………………….-65°C to +125°C
Voltage with respect to ground
Vcc……………………….. -0.5 V to 3.6 V
A9 …………………….. -0.5 V to +12.5 V
All the other pins… -0.5 V to Vcc + 0.5 V
Operating Ranges
Ambient Temperature :
Commercial ( C ) Devices…0 °C to 70 °C
Industrial ( I ) Devices……-40 °C to +85 °C
Extended ( E ) Devices… -55 °C to 125 °C
Vcc Supply Voltages : 3.0 V to 3.6 V
DC Parameters:
Symbol
ICC
Parameter
Power Supply Current
Read
Write
Standby Power Supply Current
ISB1 TTL input
ISB2 CMOS input
ILI Input Leakage Current
ILO Output Leakage Current
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
VOH Output High Voltage
VH High voltage input for Product ID and
Hardwired Data Protection modes
IH High voltage input for Product ID and
Hardwired Data Protection modes
Min
2.0
2.4
11.5
Limits
Max
10
15
1
15
1
10
0.8
0.4
12.5
50
Units
mA
mA
Test Conditions
CE#=OE#=VIL,WE#=VIH , all I/Os open,
Address input = VIL/VIH, at f=1/TRC, Min.,
VCC=VCC, Max
CE#=WE#=VIL, OE#=VIH, VCC = VCC, Max.
mA CE# = VIH, VCC = VCC, Max.
µA CE# = VCC -0.3V, VCC = VCC, Max.
µA VIN =GND to VCC, VCC = VCC, Max.
µA VOUT =GND to VCC , VCC = VCC, Max.
V VCC = VCC, Max.
V VCC = VCC, Max.
V IOL = 2.1 mA, VCC = VCC, Min.
V IOH = -400µA, VCC = VCC, Min.
V CE# = OE# =VIL, WE# = VIH
µA CE# = OE# = VIL, WE# = VIH, A9 = VH, Max.
AC Parameters:
a) Read Characteristics:
Parameter
Description
tRC Read cycle time
tAA Address to output delay
tCE CE# to output delay
tOE OE# to output delay
tCLZ CE# low to output active
tOLZ OE# low to output active
tCHZ CE# high to output at high-Z
tOHZ OE# high to output at high-Z
tOH Output hold from address change
IM29LV001-
55
Min Max
55
55
55
25
0
0
20
20
0
IM29LV001-
70
Min Max
70
70
70
35
0
0
30
30
0
IM29LV001-
90
Min Max
90
90
90
45
0
0
40
40
0
IM29LV001-
120
Min Max
120
120
120
60
0
0
50
50
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
This advanced data sheet contains product specifications which are subject to change without notice. Rev. 0.27
Integrated Memory Technologies, Inc.
2285 Martin Ave., STE A, Santa Clara, CA 95050. Tel. (408) 986-1088 Fax (408) 727-8696
6 Page Preliminary Specification
Start
5555H/AAH
2AAAH/55H
5555H/80H
5555H/AAH
2AAAH/55H
Page Address/30H
IMT
Time Out For
No t WHWH2?
Yes
Page Erase Completion
No Data# Polling:
DQ7=Data?
Yes
Page Erase Completion
Toggle Bit:
No DQ6 stops
toggling?
Yes
Page Erase Completion
Fig. 9 Page Erase Flow Chart
This advanced data sheet contains product specifications which are subject to change without notice. Rev. 0.27
Integrated Memory Technologies, Inc.
2285 Martin Ave., STE A, Santa Clara, CA 95050. Tel. (408) 986-1088 Fax (408) 727-8696
12 Page | ||
Seiten | Gesamt 14 Seiten | |
PDF Download | [ IM29LV001B Schematic.PDF ] |
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