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S71GS128N Schematic ( PDF Datasheet ) - SPANSION

Teilenummer S71GS128N
Beschreibung (S71GS128N / S71GS256N) 128N based MCPs
Hersteller SPANSION
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Gesamt 30 Seiten
S71GS128N Datasheet, Funktion
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S71GS256/128N based MCPs
Stacked Multi-Chip Product (MCP)
M21.58e6mV/12oV8rIOyMweMgiitarhrbo6itr4B(/31i62t/T8MMMUegnxaif1bo6ir-tbm(i4t)S/2eCMcMtxoOr16SP-ba3.gi0te)-V1m.o8loVtdVepCSFCRlaAasnMhd
Data Sheet
ADVANCE
INFORMATION
Distinctive Characteristics
MCP Features
Power supply voltage
— Flash Memory
VCC: 2.7V to 3.1V
VIO: 1.65V to 1.95V
— pSRAM
VCC: 1.7 V to 1.95 V
High Performance
110 ns access time
30 ns page read times
Packages:
— 8.0x11.6x1.2 mm FBGA (TLA084)
Operating Temperature
— -25°C to +85°C (Wireless)
General Description
The S71GS Series is a product line of stacked Multi-chip Product (MCP) packages
and consists of
One S29GL Flash memory die with 1.8 V VIO
one 1.8 V pSRAM (Note)
Note: Burst mode features of the pSRAM in the S71GS family of MCPs is not avail-
able. This MCP uses the page mode operation which utilizes the page mode Flash
and page mode feature-set of the pSRAM.
Publication Number S71GS256/128N_00 Revision A Amendment 0 Issue Date December 17, 2004
This document contains information on a product under development at Spansion, LLC. The information is intended to help you evaluate this product. Do not design in
this product without contacting the factory. Spansion reserves the right to change or discontinue work on this proposed product without notice.






S71GS128N Datasheet, Funktion
Advance Information
Figure 82. Extended Timing for tCEM (2) .............................. 194
Impact on Extended WRITE Operations ..................................................194
Figure 83. Extended WRITE Operation ................................ 194
Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194
Revision Summary
6 S71GS256/128N_00_A0 December 17, 2004

6 Page









S71GS128N pdf, datenblatt
Logic Symbol
Advance Information
Max (Note 1)
AMax (Note 2) –A0
R-CE1#
DQ15–DQ0
16
OE#
WE#
WP#/ACC
WE#
F-RST#
UB#
F1-CE#
CRE (Note 3)
ZZ# (Note 4)
RY/BY#
Notes:
1. Max = 24 [256 Mb Flash], 23 [128 Mb Flash].
2. AMax = A23 [256 Mb Flash], A22 [128 Mb Flash].
3. CRE is available only in Synchronous pSRAM.
4. ZZ# is available only in Asynchronous pSRAM.
12 S71GS256/128N_00_A0 December 17, 2004

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