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PDF NP043A2 Data sheet ( Hoja de datos )
| Número de pieza | NP043A2 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Composite Transistors
NP043A2
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
■ Features
• SSS-Mini type 6-pin package, reduction of the mounting area and
assembly cost by one half
• Maximum package height (0.4 mm) contributes to develop thinner
equipments
■ Basic Part Number
• UNR31A2 + UNR32A2
0.12+-00..0023
654
123
(0.35) (0.35)
1.00±0.05
Display at No.1 lead
Unit: mm
0 to 0.02
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Tr1 Collector-base voltage
(Emitter open)
VCBO
50
Collector-emitter voltage
(Base open)
VCEO
50
Collector current
Tr2 Collector-base voltage
(Emitter open)
IC
VCBO
80
−50
Collector-emitter voltage
(Base open)
VCEO
−50
Overall
Collector current
Total power dissipation
Junction temperature
Storage temperature
IC −80
PT 125
Tj 125
Tstg −55 to +125
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Unit
V
V
mA
V
V
mA
mW
°C
°C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Marking Symbol: 7T
Internal Connection
65
4
22Rk1Ω
Tr1
22Rk2Ω
22Rk2Ω 22Rk1Ω Tr2
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50 V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.2 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
60
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25 V
Output voltage high level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
V
Output voltage low level
VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.2 V
Input resistance
R1
−30% 22 +30% kΩ
Resistance ratio
R1 / R2
0.8 1.0 1.2
Transition frequency
fT VCB = 10 V, IE = −1 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2004
SJJ00285AED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet NP043A2.PDF ] | |
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