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PDF CTN369 Data sheet ( Hoja de datos )
| Número de pieza | CTN369 | |
| Descripción | (CTN368 / CTN369) NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CTN369 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CTN368
CTN369
TO-237
Plastic Package
Complementary CTN 369
Amplifier Transistors.
ABSOLUTE MAXIMUM RATINGS(Ta=25º C unless specified otherwise )
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Total Power Dissipation @TA=25ºC
VCES
VCEO
VEBO
IC
PD
Derate Above =25ºC
Total Power Dissipation @TC=25ºC
PD
Derate Above =25ºC
Operating and Storage Junction
Tj, Tstg
Temperature Range
VALUE
25
20
5
1
1.0
6.4
2.75
22
-55 to +150
THERMAL RESISTANCE
Junction to Case
Juction to Ambient
Rth(j-c)
Rth(j-a)
ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut off Current
Emitter Cut off Current
Base Emitter on Voltage
Collector Emitter Saturation Voltage
DC Current Gain
DYNAMIC CHARACTERISTICS
VCEO
VCBO
VEBO
ICBO
IEBO
VBE(on)
VCE(sat)
hFE
IC=10mA, IB=0
IC=100µA, IE=0
IE=100µA, IC=0
VCB=25V, IE=0
IE=0, VCB=25V,
Tj=150ºC
VEB=5V, IC=0
IC=1A, VCE=1V
IC=1A,IB=100mA
IC=5mA,VCE=10V
IC=500mA,VCE=1V
IC=1A,VCE=1V
Transition Frequency
fT VCE=5V, IC=10mA,
f=20MHz
45
156
MIN
20
25
5
50
85
60
65
MAX
10
1
10
1
0.5
375
UNIT
V
V
V
A
W
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNIT
V
V
V
µA
µA
V
V
MHz
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CTN369.PDF ] | |
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