|
|
PDF TPCF8201 Data sheet ( Hoja de datos )
| Número de pieza | TPCF8201 | |
| Descripción | Field Effect Transistor Silicon N-Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TPCF8201 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
TPCF8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPCF8201
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 5.4 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement-model: Vth = 0.5 to 1.2 V
(VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
IAR
EAR
Tch
Tstg
Rating
20
20
±12
3
12
1.35
1.12
0.53
0.33
1.46
1.5
0.11
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),
please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
―
JEITA
―
TOSHIBA
2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
87 6 5
12 3 4
Marking (Note 6)
85
F4A
14
1 2003-11-10
1 page  
RDS (ON) – Ta
120
Common source
100 Pulse test
VGS = 2.0 V
ID = 1.5A,0.75A
80
ID = 3A
60
VGS = 2.5 V
40 ID = 3A,1.5A,0.75A
ID = 3A,1.5A,0.75A
20 VGS = 4.5 V
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCF8201
10
10
5
IDR – VDS
2.0
3 2.5
VGS = 0 V
1
0.5
0.3 Common source
Ta = 25°C
Pulse test
0.1
0 −0.4 −0.8 −1.2
Drain-source voltage VDS (V)
Capacitance – VDS
1000
Ciss
100 Coss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
Crss
3 5 10
30 50 100
Drain-source voltage VDS (V)
Vth – Ta
1.2
1
0.8
0.6
0.4 Common source
VDS = 10 V
0.2 ID = 200 A
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
t=5s
1.6
(1)
1.2 (2)
PD – Ta
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
0.8
(3)
0.4 (4)
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input / output
characteristics
20
16 VDS
12
6
4
8
VDD = 16 V 4
VGS
8
Common source
2
4 ID = 3 A
Ta = 25°C
Pulse test
00
0 2 4 6 8 10
Total gate charge Qg (nC)
5 2003-11-10
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCF8201.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TPCF8201 | Field Effect Transistor Silicon N-Channel MOS Type | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |