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PDF AOD400 Data sheet ( Hoja de datos )
| Número de pieza | AOD400 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOD400
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD400 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOD400 is Pb-free (meets ROHS & Sony
259 specifications). AOD400L is a Green Product
ordering option. AOD400 and AOD400L are
electrically identical.
VDS (V) = 30V
ID = 10 A (VGS = 10V)
RDS(ON) < 30 mΩ (VGS = 10V)
RDS(ON) < 36 mΩ (VGS = 4.5V)
RDS(ON) < 52 mΩ (VGS = 2.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
10
10
40
15
30
20
10
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
17.4
50
4
Max
30
60
7.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOD400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
14
12
10
8
tA
=
L ⋅ ID
BV − VDD
6
4 TA=25°C
2
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
25
20
15
10
5
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
12
10
8
6
4
2
0
0
10
1
50
40 TA=25°C
30
20
10
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOD400.PDF ] | |
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