STP11NK50Z Datasheet PDF - ST Microelectronics
| Part Number | STP11NK50Z | |
| Description | N-CHANNEL Power MOSFET | |
| Manufacturers | ST Microelectronics | |
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STB11NK50Z - STP11NK50ZFP
STP11NK50Z
N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PAK
Zener-protected SuperMESHTM Power MOSFET
Features
Type
STB11NK50Z
STP11NK50ZFP
STP11NK50Z
VDSS
500 V
500 V
500 V
RDS(on)
max
ID
Pw
< 0.52 Ω 10 A 125 W
< 0.52 Ω 10 A 30 W
< 0.52 Ω 10 A 125 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
3
2
1
TO-220
3
1
D2PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB11NK50ZT4
STP11NK50ZFP
STP11NK50Z
B11NK50Z
P11NK50ZFP
P11NK50Z
Package
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
May 2008
Rev 6
1/16
www.st.com
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STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD= 250 V, ID=5.5 A,
RG= 4.7 Ω, VGS=10 V
(see Figure 19)
VDD = 250 V, ID=5.5 A,
RG = 4.7 Ω, VGS=10 V
(see Figure 19)
VDD=400 V, ID=11.4 A,
RG=4.7 Ω, VGS=10 V
(see Figure 19)
Min. Typ. Max. Unit
14.5 ns
18 ns
41 ns
15 ns
11.5 ns
12 ns
27 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=10 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=10 A,
di/dt = 100 A/µs,
VDD=45 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
10 A
40 A
1.6 V
308 ns
2.4 µC
16 A
Table 9. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1) Gate-source breakdown voltage Igs=±1mA (open drain) 30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
5/16
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| Information | Total 16 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ STP11NK50Z.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
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