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PDF HY62SF16804A Data sheet ( Hoja de datos )
| Número de pieza | HY62SF16804A | |
| Descripción | 512Kx16bit full CMOS SRAM | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
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Document Title
512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
Revision History
Revision No History
04 Initial Revision History Insert
Revised
- Reliability Spec Deleted
05 Change AC Characteristics
- tCLZ : 10/10/20 ---> 10/10/10
- tBLZ : 5/5/5 ---> 10/10/10
06 Part Number is changed
- HY62QF16803A --> HY62QF16804A
07 Marking Instruction is inserted
08 Test Condition Changed
- ILO / ISB / ISB1 / VDR / ICCDR
Marking Istruction Inserted
09 Change Logo
- Hyundai à Hynix
10 AC Parameter is changed
- tCHZ : 30ns --> 20ns
- tBHZ : 30ns --> 20ns
- tOHZ : 30ns --> 20ns
11 Change DC Parameter
- Icc1(1us) : 5mA à 4mA
Change Data Retention
- IccDR(LL) : 25uA à 15uA
Change AC Parameter
- tOE
: 40ns à 35ns@70ns
HY62SF16804A Series
512Kx16bit full CMOS SRAM
Draft Date
Jul.02.2000
Remark
Preliminary
Oct.23.2000 Preliminary
Nov.13.2000 Preliminary
Dec.5.2000 Preliminary
Dec.16.2000 Preliminary
Apr.28.2001
Jul.18.2001
Jan.28.2002
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.11 /Jan. 2002
Hynix Semiconductor
1 page  
HY62SF16804A
AC CHARATERISTICS
Vcc = 1.7V~2.3V, TA = 0°C to 70°C / -40°C to 85°C
# Symbol Parameter
READ CYCLE
1 tRC
Read Cycle Time
2 tAA
Address Access Time
3 tACS
Chip Select Access Time
4 tOE
Output Enable to Output Valid
5 tBA
/LB, /UB Access Time
6 tCLZ
Chip Select to Output in Low Z
7 tOLZ
Output Enable to Output in Low Z
8 tBLZ
/LB, /UB Enable to Output in Low Z
9 tCHZ
Chip Deselection to Output in High Z
10 tOHZ Out Disable to Output in High Z
11 tBHZ
/LB, /UB Disable to Output in High Z
12 tOH
Output Hold from Address Change
WRITE CYCLE
13 tWC
Write Cycle Time
14 tCW
Chip Selection to End of Write
15 tAW
Address Valid to End of Write
16 tBW
/LB, /UB Valid to End of Write
17 tAS
Address Set-up Time
18 tWP
Write Pulse Width
19 tWR
Write Recovery Time
20 tWHZ Write to Output in High Z
21 tDW
Data to Write Time Overlap
22 tDH
Data Hold from Write Time
23 tOW
Output Active from End of Write
-70 -85 -10
Min. Max. Min. Max. Min Max. Unit
70 - 85 - 100 - ns
- 70 - 85 - 100 ns
- 70 - 85 - 100 ns
- 35 - 45 - 50 ns
- 70 - 85 - 100 ns
10 - 10 - 10 - ns
5 - 5 - 5 - ns
10 - 10 - 10 - ns
0 20 0 30 0 30 ns
0 20 0 30 0 30 ns
0 20 0 30 0 30 ns
10 - 10 - 15 - ns
70 - 85 - 100 - ns
60 - 70 - 80 - ns
60 - 70 - 80 - ns
60 - 70 - 80 - ns
0 - 0 - 0 - ns
50 - 55 - 75 - ns
0 - 0 - 0 - ns
0 25 0 30 0 35 ns
30 - 35 - 45 - ns
0 - 0 - 0 - ns
5 - 5 - 10 - ns
AC TEST CONDITIONS
TA = 0°C to 70°C / -40°C to 85°C, unless otherwise specified
PARAMETER
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load
tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
Other
Value
0.4V to 1.6V
5ns
0.9V
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
AC TEST LOADS
VTM = 1.8V
D
OUT
4091 Ohm
CL(1)
3273 Ohm
Note
1. Including jig and scope capacitance
Rev.11 /Jan. 2002
4
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HY62SF16804A.PDF ] | |
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