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FGA180N30D Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGA180N30D
Beschreibung 300V PDP IGBT
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 9 Seiten
FGA180N30D Datasheet, Funktion
www.DataSheet4U.com
June 2006
FGA180N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat), Typ = 1.1 V@ IC = 40A
• High Input Impedance
Description
Employing Unified IGBT Technology, FGA180N30D provides
low conduction and switching loss. FGA180N30D offers the
optimum solution for PDP applications where low condution loss
is essential.
GCE
TO-3P
Absolute Maximum Rating TC = 25oC unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
C
G
E
FGA180N30D
300
± 30
180
450
10
40
480
192
-55 to +150
300
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Typ.
--
--
--
Max.
0.26
1.56
40
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA180N30D Rev. A
1
www.fairchildsemi.com






FGA180N30D Datasheet, Funktion
Typical Performance Characteristics (Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
Figure 14. Turn-Off Characteristics
vs. Collector Current
1000
Com m on Em itter
VCC = 200V
V = 15V, R = 5
GE G
T = 25oC
C
T = 125oC
C
100
tr
Td(on)
10
0
20 40 60 80 100 120 140 160 180
Collector Current, I [A]
C
1000
tf
100
Td(off)
Common Emitter
V = 200V
CC
V = 15V, R = 5
GE G
T = 25oC
C
T = 125oC
C
10
0 20 40 60
80 100 120 140 160 180
Collector Current, I [A]
C
Figure 15. Switching Loss vs Gate Resistance
Figure 16. Switching Loss vs
Collector Current
Eoff
1
Eon
0.1
0
Comm on Em itter
V = 200V, V = 15V
CC GE
I = 40A
C
T = 25oC
C
T = 125oC
C
10 20 30 40 50
Gate Resistance, R []
G
Figure 17. Turn Off SOA Characteristics
1000
10
Eoff
1
0.1
0
Eon
Com m on Em itter
V =200V
CC
V = 15V, R = 5
GE G
T = 25oC
C
T = 125oC
C
20 40 60 80 100 120 140 160 180
Collector C urrent, I [A]
C
100
10
1
1
Safe Operating Area
V = 20V, T = 100oC
GE C
10 100
Collector-Emitter Voltage, V [V]
CE
500
FGA180N30D Rev. A
6
www.fairchildsemi.com

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