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FGA15N120ANTD Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGA15N120ANTD
Beschreibung 1200V NPT Trench IGBT
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 9 Seiten
FGA15N120ANTD Datasheet, Funktion
www.DataSheet4U.com
FGA15N120ANTD
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: VCE(sat), typ = 1.9V
@ IC = 15A and TC = 25°C
• Low switching loss: Eoff, typ = 0.6mJ
@ IC = 15A and TC = 25°C
• Extremely enhanced avalanche capability
May 2006
tm
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven, etc.
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current (Note 1)
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC
RθJC
RθJA
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
FGA15N120ANTD
1200
± 20
30
15
45
15
45
186
74
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.67
2.88
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA15N120ANTD Rev. A
1
www.fairchildsemi.com






FGA15N120ANTD Datasheet, Funktion
Typical Performance Characteristics (Continued)
Figure 13. Gate Charge Characteristics
15
Common Emitter
RL = 40Ω
12 TC = 25oC
600V
9 400V
6 Vcc = 200V
3
0
0 20 40 60 80 100 120
Gate Charge, Qg [nC]
Figure 14. SOA Characteristics
100 Ic M AX (Pulsed)
Ic M AX (Continuous)
10
DC O peration
1
50μs
100μs
1ms
Single N onrepetitive
0.1 Pulse Tc = 25oC
Curves m ust be derated
linearly with increase
0.01
in tem perature
0.1 1 10
100
C ollector - Em itter Voltage, VCE [V]
1000
Figure 15. Turn-Off SOA
100
10
Safe Operating Area
1 VGE = 15V, TC = 125oC
10 100 1000
Collector-Emitter Voltage, VCE [V]
Figure 16. Transient Thermal Impedance of IGBT
10
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1 10
FGA15N120ANTD Rev. A
6
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