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Teilenummer | FGA15N120AND |
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Beschreibung | IGBT | |
Hersteller | Fairchild Semiconductor | |
Logo | ||
Gesamt 8 Seiten www.DataSheet4U.com
FGA15N120AND
IGBT
General Description
Employing NPT technology, Fairchild’s AND series of
IGBTs provides low conduction and switching losses. The
AND series offers solutions for applications such as
induction heating (IH), motor control, general purpose
inverters and uninterruptible power supplies (UPS).
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.4 V @ IC = 15A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 210ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
GC E
TO-3P
G
E
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FGA15N120AND
1200
± 20
24
15
45
15
45
200
80
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.63
2.88
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A
50
10
T = 125oC
J
1
T = 25oC
J
0.1
0.0
TC = 125℃
T = 25℃
C
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage , VF [V]
Fig 18. Forward Characteristics
7000
6000
5000
di/dt = 200A/µs
4000
3000
di/dt = 100A/µs
2000
1000
0
5 10 15 20
Forward Current , IF [A]
Fig 20. Stored Charge
25
30
di/dt = 200A/µs
25
20
15
di/dt = 100A/µs
10
5
0
5 10 15 20
Forward Current , IF [A]
Fig 19. Reverse Recovery Current
25
400
300 di/dt = 100A/µs
200
di/dt = 200A/µs
100
0
5 10 15 20
Forward Current , IF [A]
Fig 21. Reverse Recovery Time
25
©2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ FGA15N120AND Schematic.PDF ] |
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