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FGA120N30D Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGA120N30D
Beschreibung 300V PDP IGBT
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 9 Seiten
FGA120N30D Datasheet, Funktion
www.DataSheet4U.com
June 2006
FGA120N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 25A
• High Input Impedance
Description
Employing Unified IGBT Technology, FGA120N30D provides
low conduction and switching loss. FGA120N30D offers the
optimum solution for PDP applications where low condution loss
is essential.
C
GCE
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
G
E
FGA120N30D
300
± 30
120
300
10
40
290
116
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.43
1.56
40
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA120N30D Rev. A
1
www.fairchildsemi.com






FGA120N30D Datasheet, Funktion
Typical Performance Characteristics (Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
Figure 14.Turn-Off Characteristics vs.
Collector Current
1000
Com m on Em itter
V = 200V, V = 15V
CC GE
R = 8.7
G
T = 25oC
C
T = 125oC
C
100
tr
td(on)
10
0
20 40 60 80 100
Collector Current, I [A]
C
120
1000
100
10
0
tf
td(off)
Com m on Em itter
V = 200V,V = 15V
CC GE
R =8.7
G
T = 25oC
C
T = 125oC
C
20 40 60 80 100 120
Collector Current, I [A]
C
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs.
Collector Current
Com m on Em itter
V = 200V, V = 15V
CC GE
I =25A
D
T = 25oC
C
T = 125oC
C
1
Eoff
0.1
0
Eon
10 20 30 40
G ate Resistance, R []
G
50
Com m on Em itter
V = 200V,V = 15V
CC GE
10
R = 5
G
T = 25oC
C
T = 125oC
C
1
Eoff
Eon
0.1
0
20 40 60 80 100
Collector Current, I [A]
C
120
Figure 17. Turn-Off SOA Figure
1000
Safe Operating Area
V = 20V, T = 100oC
GE C
100
10
1
10 100
Collector-Emitter Voltage, V [V]
CE
1000
FGA120N30D Rev. A
6
www.fairchildsemi.com

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