|
|
PDF IRF7324D1 Data sheet ( Hoja de datos )
| Número de pieza | IRF7324D1 | |
| Descripción | FETKY MOSFET / Schottky Diode | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF7324D1 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
PD- 91789
PRELIMINARY
IRF7324D1
FETKY™ MOSFET / Schottky Diode
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal for Mobile Phone Applications
l Generation V Technology
l SO-8 Footprint
A1
A2
S3
G4
8K
7K
6D
5D
Description
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
VDSS = -20V
RDS(on) = 0.18Ω
Schottky Vf = 0.39V
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
S O -8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Maximum
-2.9
-2.3
-23
2.0
1.3
16
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
± 12
-5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient
Maximum
62.5
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
ISD ≤ -2.2A, di/dt ≤ -50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
1
1 page  
IRF7324D1
Power Mosfet Characteristics
1500
1000
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SH O R TE D
C rss = C gd
C oss = Cds + C gd
C is s
Coss
10
I D = -2.2A
VDS = -16V
8
6
Crss
500
0A
1 10 100
-VDS , Drain-to-Source Voltage (V)
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0A
0 5 10 15 20 25
Q G , Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.001
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7324D1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF7324D1 | FETKY MOSFET / Schottky Diode | International Rectifier |
| IRF7324D1PbF | FETKY MOSFET / Schottky Diode | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |