|
|
PDF MRF6S9160HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF6S9160HR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MRF6S9160HR3 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts,
IDQ = 1200 mA, Pout = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.9 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1200 mA,
PouPt o=w7e6r
Watts Avg.,
Gain — 20
Full
dB
Frequency
Band
(865
-
895
MHz)
Drain Efficiency — 45%
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 75 dBc
EVM — 2% rms
GSM Application
•
1Ty6p0icWaal GttsS,MFuPlleFrfroerqmuaennccey:BVaDnDd
= 28
(921
V- 9o6lt0s,MIDHQz=)
1200
mA,
Pout
=
Power Gain — 20 dB
Drain Efficiency — 58%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S9160H
Rev. 1, 5/2006
MRF6S9160HR3
MRF6S9160HSR3
880 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S9160HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S9160HSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
VDSS
VGS
PD
Tstg
TC
TJ
Value
- 0.5, +68
- 0.5, +12
565
3.2
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9160HR3 MRF6S9160HSR3
1
1 page  
C16
C17
C1
B1
C18
R2
900 MHz
Rev. 2
C24
B2
C21 C22 C23
R1
C19
L1
C5
C3 C4
C6
C7 C9
C20
L2
C14
C12 C13
C8 C10 C11
C15 C2
Figure 2. MRF6S9160HR3(SR3) Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRF6S9160HR3 MRF6S9160HSR3
5
5 Page 
PACKAGE DIMENSIONS
B
B
(FLANGE)
H
E
A
G
1
2X Q
bbb M T A M B M
2
D
bbb M T A M
A
(FLANGE)
3
K
BM
M (INSULATOR)
bbb M T A M
N (LID)
ccc M T A M
C
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
B M ccc M T A M B M
S (INSULATOR)
B M aaa M T A M B M
CASE 465 - 06
ISSUE G
NI - 780
MRF6S9160HR3
F
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
Q .118 .138
R 0.365 0.375
S 0.365 0.375
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
33.91 34.16
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
19.66 19.96
19.60 20.00
3.00 3.51
9.27 9.53
9.27 9.52
0.127 REF
0.254 REF
0.381 REF
4X U
(FLANGE)
B
4X Z
(LID)
1
B
(FLANGE)
H
E
A
2
D
bbb M T A M
A
(FLANGE)
2X K
BM
N (LID)
ccc M T A M
M (INSULATOR)
bbb M T A M
C
3
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
B M ccc M T A M B M
S (INSULATOR)
B M aaa M T A M B M
CASE 465A - 06
ISSUE H
NI - 780S
MRF6S9160HSR3
F
INCHES
DIM MIN MAX
A 0.805 0.815
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
R 0.365 0.375
S 0.365 0.375
U −−− 0.040
Z −−− 0.030
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN MAX
20.45 20.70
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
19.61 20.02
19.61 20.02
9.27 9.53
9.27 9.52
−−− 1.02
−−− 0.76
0.127 REF
0.254 REF
0.381 REF
RF Device Data
Freescale Semiconductor
MRF6S9160HR3 MRF6S9160HSR3
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF6S9160HR3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MRF6S9160HR3 | RF Power Field Effect Transistors | Freescale Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |