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PDF TPCA8003-H Data sheet ( Hoja de datos )
| Número de pieza | TPCA8003-H | |
| Descripción | Field Effect Transistor Silicon N Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
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TPCA8003-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCA8003-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
0.5±0.1 1.27
8
0 .4 ± 0 .1
5
Unit: mm
0.05 M A
• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg = 25 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 60S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
30
30
±20
35
105
45
2.8
1.6
159
35
4.5
150
−55 to 150
Unit
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
0 .1 5 ± 0 .0 5
0 .9 5 ± 0 .0 5
14
5 .0 ± 0 .2
0.595
A
0 .1 6 6 ± 0 .0 5
S 0.05 S
1 4 1.1±0.2
4 .2 5 ± 0 .2
8 5 0.8±0.1
1,2,3：SOURCE 4：GATE
5,6,7,8：DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2003-8-7
1 page  
RDS (ON) – Ta
20
COMMON SOURCE
PULSE TEST
16
12
8 VGS = 4.5 V
ID = 35A
18
9
4
VGS = 10 V
ID = 35A,18A,9A
0
−80 −40
0
40 80 120 160
AMBIENT TEMPERATURE Ta (°C)
TPCA8003-H
1000
100
10
IDR – VDS
COMMON SOURCE
Ta = 25°C
PULSE TEST
10
3
4.5
1
1
VGS = 0 V
0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0
DRAIN-SOURCE VOLTAGE VDS (V)
10000
CAPACITANCE – VDS
1000
Ciss
Coss
100
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
10
0.1
1
Crss
10 100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Ta
2.5
2
1.5
1
COMMON SOURCE
0.5 VDS = 10 V
ID = 1 mA
PULSE TEST
0
−80 −40
0
40
80 120 160
AMBIENT TEMPERATURE Ta (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
50 20
40 16
VDD = 6 V
30
VDS
20
12
24
12
8
COMMON SOURCE
10
VGS
ID = 35 A
4
Ta = 25°C
PULSE TEST
00
0 8 16 24 32 40
TOTAL GATE CHARGE Qg (nC)
5
2003-8-7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCA8003-H.PDF ] | |
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