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Teilenummer | IRL1004 |
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Beschreibung | HEXFET Power MOSFET | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 8 Seiten www.DataSheet4U.com
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing techniques
to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RqJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 91702B
IRL1004
HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 0.0065Ω
ID = 130A
S
TO-220AB
Max.
130
92
520
200
1.3
± 16
700
78
20
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
1
11/29/99
IRL1004
VDS
RG
4.5 V
tp
L
D.U.T.
IAS
0.01Ω
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
4.5 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
1800
1500
1200
TOP
BOTTOM
ID
32A
55A
78A
900
600
300
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ IRL1004 Schematic.PDF ] |
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