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PDF LX5512B Data sheet ( Hoja de datos )
| Número de pieza | LX5512B | |
| Descripción | Power Amplifier | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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LX5512B
TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The LX5512B is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range.
The PA is implemented as a three-
stage monolithic microwave
integrated circuit (MMIC) with active
bias and input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) IC process
(MOCVD). It operates at a single
low voltage supply of 3.3V with 32
dB power gain between 2.4-2.5GHz,
at a low quiescent current of 65mA.
For 19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3%, and consumes 140mA total DC
current.
The LX5512B is available in a 16-
pin 3mmx3mm micro-lead package
(MLP). The compact footprint, low
profile, and excellent thermal capability
of LX5512B meets the requirements of
high-gain power amplifiers for IEEE
802.11b/g applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
PRODUCT HIGHLIGHT
KEY FEATURES
Advanced InGaP HBT
2.4-2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current ICQ
~65mA
Power Gain ~ 32 dB at
2.45GHz & Pout=19dBm
Total Current ~140mA for
Pout=19dBm at 2.45 GHz
OFDM
EVM ~3 % for 64QAM/ 54Mbps
& Pout=19dBm
Small Footprint: 3x3mm2
Low Profile: 0.9mm
APPLICATIONS
IEEE 802.11b/g
LQ
PACKAGE ORDER INFO
Plastic MLPQ
16 pin
LX5512BLQ
Note: Available in Tape & Reel. Append the letters “TR” to the part number.
(i.e. LX5512BLQTR)
This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM)
testing. Appropriate ESD procedures should be observed when handling this device.
Copyright © 2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
1 page  
LX5512B
TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
PACKAGE DIMENSIONS
LQ 16-Pin MLPQ 3x3 (67x67 mil DAP)
D
b
E D2
E2
e
A1 A
A3
MILLIMETERS
INCHES
Dim MIN MAX MIN MAX
A 0.80 1.00 0.031 0.039
A1 0 0.05 0 0.002
A3 0.20 REF
0.008 REF
b 0.18 0.30 0.007 0.012
D 3.00 BSC
0.118 BSC
E 3.00 BSC
0.118 BSC
e 0.50 BSC 0.020 BSC
D2 1.30 1.55 0.051 0.061
E2 1.30 1.55 0.051 0.061
K 0.2
- 0.008 -
L 0.35
0.50 0.012 0.020
K
L
Copyright © 2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet LX5512B.PDF ] | |
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