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PDF MCP6G03 Data sheet ( Hoja de datos )

Número de pieza MCP6G03
Descripción (MCP6G01 - MCP6G04) Selectable Gain Amplifier
Fabricantes Microchip Technology 
Logotipo Microchip Technology Logotipo



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MCP6G01/2/3/4
110 µA Selectable Gain Amplifier
Features
• 3 Gain Selections:
- +1, +10, +50 V/V
• One Gain Select Input per Amplifier
• Rail-to-Rail Input and Output
• Low Gain Error: ±1% (max.)
• High Bandwidth: 250 kHz to 900 kHz (typ.)
• Low Supply Current: 110 µA (typ.)
• Single Supply: 1.8V to 5.5V
• Extended Temperature Range: -40°C to +125°C
Typical Applications
• A/D Converter Driver
• Industrial Instrumentation
• Bar Code Readers
• Metering
• Digital Cameras
Block Diagram
VDD
VIN
Gain
Switches
RF
3
VOUT
GSEL
CS
Gain Select
Logic
5 MΩ
(MCP6G03
only)
VSS
RG
Gain
(V/V)
GSEL Voltage (Typ.)
(V)
1
10
50
Note:
VDD/2 (or open)
0
VDD
VSS is assumed to be 0V
Description
The Microchip Technology Inc. MCP6G01/2/3/4 are
analog Selectable Gain Amplifiers (SGA). They can be
configured for gains of +1 V/V, +10 V/V, and +50 V/V
through the Gain Select input pin(s). The Chip Select
pin on the MCP6G03 can put it into shutdown to
conserve power. These SGAs are optimized for single
supply applications requiring reasonable quiescent
current and speed.
The single amplifier MCP6G01 and MCP6G03, and the
dual amplifier MCP6G02, are available in 8-pin SOIC
and MSOP packages. The quad amplifier MCP6G04 is
available in 14-pin SOIC and TSSOP packages. All
parts are fully specified from -40°C to +125°C.
Package Types
MCP6G01
SOIC, MSOP
MCP6G02
SOIC, MSOP
NC 1
GSEL 2
VIN 3
VSS 4
8 NC VOUTA 1
7 VDD GSELA 2
6 VOUT
5 NC
VINA 3
VSS 4
8 VDD
7 VOUTB
6 GSELB
5 VINB
MCP6G03
SOIC, MSOP
MCP6G04
SOIC, TSSOP
NC 1
GSEL 2
VIN 3
VSS 4
8 CS VOUTA 1
7 VDD GSELA 2
6 VOUT
5 NC
VINA 3
VDD 4
VINB 5
GSELB 6
14 VOUTD
13 GSELD
12 VIND
11 VSS
10 VINC
9 GSELC
VOUTB 7
8 VOUTC
© 2006 Microchip Technology Inc.
DataSheet4 U .com
DS22004A-page 1

1 page




MCP6G03 pdf
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MCP6G01/2/3/4
DIGITAL ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, TA = 25°C, VDD = +1.8V to +5.5V, VSS = GND, G = +1 V/V, VIN = (0.3V)/G,
RL = 100 kΩ to VDD/2, CL = 60 pF, GSEL = VDD/2, and CS is tied low.
Parameters
Sym Min Typ Max Units
Conditions
GSEL High to Valid Output Time,
tGSH10
12
— µs VIN = 30 mV,
G = +10 to +50 Select
GSEL = 0.75VDD to VOUT = 1.38V
GSEL Low to Valid Output Time,
tGSL50
9
— µs VIN = 30 mV,
G = +50 to +10 Select
GSEL = 0.25VDD to VOUT = 0.42V
Note 1: GSEL is a tri-level input pin. The gain is 10 when its voltage is low, 1 when it is at mid-suppy, and 50 when it is high.
2: Not tested in production. Set by design and characterization.
3: ISS_SHDN includes the current through the CS pin, RL and RLAD, and excludes digital switching currents. The block dia-
gram on the from page shows these current paths (through VSS).
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +1.8V to +5.5V, and VSS = GND.
Parameters
Sym Min Typ Max Units
Conditions
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
TA –40 — +125 °C
TA –40 — +125 °C (Note 1)
TA –65 — +150 °C
Thermal Resistance, 8L-SOIC
θJA — 163 — °C/W
Thermal Resistance, 8L-MSOP
θJA — 206 — °C/W
Thermal Resistance, 14L-SOIC
θJA — 120 — °C/W
Thermal Resistance, 14L-TSSOP
θJA — 100 — °C/W
Note 1: The MCP6G01/2/3/4 family of SGAs operates over this temperature range, but operation must not cause TJ to exceed
Maximum Junction Temperature (+150°C).
VIN 0.150V
0.030V
GSEL
tGSL1
tGSM10
tGSH1
tGSM50
tGSH10
tGSL50
VOUT 0.15V
FIGURE 1-1:
1.50V
0.15V
0.03V
Gain Select Timing Diagram.
1.50V
0.03V
0.30V
1.50V
0.30V
© 2006 Microchip Technology Inc.
DataSheet4 U .com
DS22004A-page 5

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MCP6G03 arduino
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MCP6G01/2/3/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, G = +1 V/V, VIN = (0.3V)/G,
RL = 100 kΩ to VDD/2, CL = 60 pF, GSEL = VDD/2, and CS is tied low.
0
In Shutdown Mode
-1 VIN = VDD/2
-2 CS = VDD
-3
-4
ISS_SHDN
-5
-6
-7
-8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
FIGURE 2-13:
Quiescent Current (ISS) in
Shutdown Mode vs. Supply Voltage.
0
-1
-2
In Shutdown Mode
VIN = VDD/2
-3
-4 VDD = 1.8V
-5
-6
-7 VDD = 5.5V
-8
-9
-50 -25 0 25 50 75
Ambient Temperature (°C)
100
125
FIGURE 2-16:
Quiescent Current (ISS) in
Shutdown Mode vs. Temperature.
1,000
VDD = 5.5V
VIN = VDD
100
10
1
55 65 75 85 95 105 115 125
Ambient Temperature (°C)
FIGURE 2-14:
Temperature.
Input Bias Current vs.
1.E1-02m
1.E-013m
1.E1-0004µ
1.E-1005µ
1.E-016µ
1.E1-0007n
1.E-1008n
1.E-019n
1.E1-0100p
1.E-1101p
1.E-112p
+125°C
+85°C
+25°C
-40°C
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
Input Voltage (V)
FIGURE 2-17:
Voltage.
Input Bias Current vs. Input
10,000
VDD = 5.5V
1,000
100
10
TA = +125°C
TA = +85°C
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Input Voltage (V)
FIGURE 2-15:
Voltage.
Input Bias Current vs. Input
30
TA = –40°C
25 TA = +25°C
20
TA = +85°C
TA = +125°C
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
FIGURE 2-18:
Output Short Circuit Current
vs. Supply Voltage.
© 2006 Microchip Technology Inc.
DataSheet4 U .com
DS22004A-page 11

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