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Teilenummer | RN1315 |
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Beschreibung | (RN1314 - RN1318) TOSHIBA Transistor Silicon NPN Epitaxial Type | |
Hersteller | Toshiba Semiconductor | |
Logo | ||
Gesamt 8 Seiten www.DataSheet4U.com
RN1314~RN1318
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1314,RN1315,RN1316
RN1317,RN1318
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2314~RN2318
Equivalent Circuit and Bias Resister Values
Type No.
RN1314
RN1315
RN1316
RN1317
RN1318
R1 (kΩ)
1
2.2
4.7
10
47
R2 (kΩ)
10
10
10
4.7
10
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1314~1318
RN1314
RN1315
RN1316
RN1317
RN1318
RN1314~1318
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
50
50
5
6
7
15
25
100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
―
SC-70
2-2E1A
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-07
www.DataSheet4U.com
RN1314~RN1318
6 2001-06-07
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ RN1315 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RN1310 | (RN1310 / RN1311) TOSHIBA Transistor Silicon NPN Epitaxial Type | Toshiba Semiconductor |
RN1311 | (RN1310 / RN1311) TOSHIBA Transistor Silicon NPN Epitaxial Type | Toshiba Semiconductor |
RN1312 | (RN1312 / RN1313) Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
RN1313 | (RN1312 / RN1313) Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
RN1314 | (RN1314 - RN1318) TOSHIBA Transistor Silicon NPN Epitaxial Type | Toshiba Semiconductor |
Teilenummer | Beschreibung | Hersteller |
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KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |